[C-5-6] Auger Recombination Enhanced Hot Electron Programming in Flash EEPROMs

N. K. Zous, L. P. Chiang, C. W. Tsai, T. Wang (1.Department of Electronics Engineering, National Chiao-Tung University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[C-5-7] On the Capacitance Coupling Ratios of a Source-Side Injection Flash Memory Cell

Chun-Mai Liu, James Brennan, Jr., Kaiman Chan, Ping Guo, Albert V. Kordesch, Kung-Yen Su (1.Winbond Electronics Corporation of America)

2000 International Conference on Solid State Devices and Materials |PDF Download

[C-6-1] Characteristics of Tunneling Nitride Grown by Electron Cyclotron Resonance Nitrogen Plasma Nitridation and Its Application to Low Voltage EEPROM

Kyeong-Sik Min, Kwyro Lee (1.Memory Design Dept. 4, Hyundai Electronics Industries Co., Ltd., 2.Department of Electrical Engineering, Korea Advanced Institute of Science and Technology)

2000 International Conference on Solid State Devices and Materials |PDF Download

[C-6-2] Analysis of Gate Disturb Degradation by Nitridation of Flash Tunnel Oxide

M. Arai, T. Hashidzume, T. Nitta, Y. Odake, I. Matsuo (1.ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporation)

2000 International Conference on Solid State Devices and Materials |PDF Download

[C-6-3] Simulation of Positive Oxide Trapped Charge Induced Leakage Current and Read-Disturb in Flash EEPROMs

N. K. Zous, C. W. Tsai, L. P. Chiang, C. C. Yeh, Tahui Wang (1.Department of Electronics Engineering, National Chiao-Tung University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[C-6-4] Screening for Flash Cells with Retention Related Defects

Davide Giardini, Francesco Paolo Scarlata (1.STMicroelectronics)

2000 International Conference on Solid State Devices and Materials |PDF Download

[LC-1-1] Endurance Enhancement in microFLASH R Memory Device

Efraim Aloni, Micha Gutman, Yakov Roizin, David Finzi, Choi Il hyun, Ilan Bloom, Dror Levy, Ameet Lann, Paolo Pavan (1.Tower Semiconductor Ltd., 2.Saifun Semiconductor Ltd.)

2000 International Conference on Solid State Devices and Materials |PDF Download

[LC-1-2] Evaluation of SrBi2(TaxNb1-x)2O9(SBTN) Crystallization Technique at 650℃

Ko Nakamura, Hideki Yamawaki, Seigen Otani (1.F project, Fujitsu Labs. Ltd.)

2000 International Conference on Solid State Devices and Materials |PDF Download

[LC-1-3] Fabrication and Characterization of Pt/(Bi, La)4Ti3O12/Si3N4/Si MFIS Structure for FET-Type Ferroelectric Memory Applications

Takeshi Kijima, Yoshihisa Fujisaki, Hiroshi Ishiwara (1.Frontier Collaborative Research Center, Tokyo Institute of Technology)

2000 International Conference on Solid State Devices and Materials |PDF Download

[D-3-1] Analog Computation Using a Quantum-Dot Cell Network

Nan-Jian Wu, Kazuyuki Saito, Hitoshi Yasunaga (1.The University of Aizu, 2.The University of Electro-Communications)

2000 International Conference on Solid State Devices and Materials |PDF Download

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