[A-9-4] Dynamic Strain and Its Distribution during Ultrasonic Flip Chip Bonding

Masafumi Hizukuri, Naoya Watanabe, Tanemasa Asano (1.Center for Microelectronic Systems, Kyushu Institute of Technology)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-7-1] Non-Equilibrium Structures of Si/SiO2 and Si/SiOxNy Interfaces

Jiro Ushio, Jurgen Schulte, Takuya Maruizumi (1.Advanced Research Laboratory, Hitachi, Ltd., 2.Department of Applied Physics, University of Technology)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-7-2] Chemical Structures of Oxynitrides/Si(100) Interface

H. Kato, K. Takahashi, H. Nohira, N. Tamura, K. Hikazutani, S. Sano, T. Hattori (1.Department of Electrical and Electronic Engineering, Musashi Institute of Technology, 2.Process Develop. Dept., Technol. Develop. Div., Semiconductor Group, Fujitsu Ltd.)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-7-3] SiO2/Si(111) Interface Structures Formed by Atomic Oxygen

K. Takahashi, H. Nohira, T. Nakamura, T. Ohmi, T. Hattori (1.Department of Electrical and Electronic Engineering, Musashi Institute of Technology, 2.New Industry Creation Hatchery Center, Tohoku University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-7-4] Atomic Scale Characterization of Nitridation Process on Si(100)-2x1 Surfaces by Radical Nitrogen

Daisuke Matsushita, Hiroya Ikeda, Akira Sakai, Shigeaki Zaima, Yukio Yasuda (1.Department of Crystalline Materials Science, School of Engineering, Nagoya University, 2.Center for Cooperative Research in Advanced Science and Technology, Nagoya University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-7-5] Theoretical Calculations for the Elimination of Silanol and Decrease in Dielectric Constant

Akira Fujimoto, Osamu Sugiura (1.Department of Physical Electronics, Tokyo Institute of Technology)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-7-6] Molecular Orbital Calculations of Sulfur Doping Reactions in Diamond CVD

Hui Zhou, Yasuto Yokoi, Hiroyuki Tamura, Kiyoshi Sugisako, Seiichi Takami, Momoji Kubo, Akira Miyamoto, Akira Imamura, Mikka N.-Gamo, Toshihiro Ando (1.Department of Materials Chemistry, Graduate School of Engineering, Tohoku University, 2.Hiroshima Kokusai Gakuin University, 3.Core Research for Evolutional Science and Technology (CREST), c/o National Institute for Research in Inorganic Materials (NIRIM))

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-8-1] Ion Irradiation Stimulated Crystal Nucleation in Amorphous Si on SiO2

Masanobu Miyao, Isao Tsunoda, Taizoh Sadoh, Atsushi Kenjo (1.Department of Electronic Device Engineering, Kyushu University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-8-2] Selective Single-Crystalline-Silicon Growth on Non-Alkali Glass

Akito Hara, Nobuo Sasaki (1.Fujitsu laboratories Ltd.)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-8-3] Hot Carrier Effect in Low Temperature Poly-Silicon Thin Film Transistors

Y. Uraoka, T. Hatayama, T. Fuyuki, T. Kawamura, Y. Tsuchihashi (1.Materials Science, Nara Institute of Science and Technology, 2.LCD Division, Matsushita Electric Industrial Co., Ltd.)

2000 International Conference on Solid State Devices and Materials |PDF Download