[LE-2-3] Investigation on Reliability of High Quality Ultra-Thin ISSG Oxides

T. Y. Luo, G. A. Brown, A. L. P. Rotondaro (1.University of Texas at Austin, 2.International Sematech, Inc., 3.Texas Instruments Inc)

2000 International Conference on Solid State Devices and Materials |PDF Download

[LE-2-4] The Effect of Organic Compounds Contamination on the Electrical Characteristics of Ultra-Thin Gate Oxide Films

Yoshihide Wakayama, Takeshi Ohkawa, Osamu Nakamura, Sadao Kobayashi, Shigetoshi Sugawa, Herzl Aharoni, Tadahiro Ohmi (1.Department of Electronics Engineering, Graduate School of Engineering, Tohoku University, 2.New Industry Creation Hatchery Center, Tohoku University, 3.Taisei Corporation, 4.At leave from the department of Electrical and Computer Engineering Ben-Gurion University of the Negev Beer-Sheva)

2000 International Conference on Solid State Devices and Materials |PDF Download

[LE-2-5] Influence of Organic Contaminant on Breakdown Characteristics of MOS Capacitors with Thin SiO2

Takenobu Yoshino, Shin Yokoyama, Tsukuru Suzuki, Toshiaki Fujii (1.Research Center for Nanodevices and Systems, Hiroshima University, 2.EBARA, Co., Ltd.)

2000 International Conference on Solid State Devices and Materials |PDF Download

[LE-2-6] Sub-2nm Equivalent SiO2 Thickness Ta2O5 for Gate Dielectric Using RTA + UV/O3

Akihisa Yamaguchi, Takayuki Aoyama, Toshihiro Sugii (1.Fujitsu Laboratories Ltd.)

2000 International Conference on Solid State Devices and Materials |PDF Download