[P5-11] High Indium Content InGaN/GaN Multiple Quantum Well Yellowish Green Light Emitting Diodes

C. H. Chen, Y. K. Su, S. J. Chang, G. C. Chi, J. K. Sheu (1.Institute of Microelectronics and Department of Electrical Engineering National Cheng Kung University, 2.Department of Physics, National Central University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P5-12] In0.05Ga0.95N/Al0.1Ga0.9N LEDs precoated with blue, green and red phosphors

C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, J. M. Tsai, R. K. Wu (1.Institute of Microelectronics, Department of Electrical Engineering National Cheng Kung University, 2.Optical Science Center, National Central University, 3.South Epitaxy Corporation, 4.Nantex Industry Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P5-13] Experimental Consideration of Optical Band-Gap Energy of Wurtzite InN

Takashi Matsuoka, Masashi Nakao, Hiroshi Okamoto, Hiroshi Harima, Eiji Kurimoto (1.NTT Basic Research Laboratories, 2.NTT Photonics Laboratories, 3.Kyoto Institute of Technology, Dept. of Electronics and Information Science, 4.Osaka University, Dept. of Applied Physics)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P5-14] Epitaxial growth of ZnO films by low-pressure MOVPE

B. P. Zhang, L. H. Manh, K. Wakatsuki, N. Usami, Y. Segawa (1.Photodynamics Research Center, The Institute of Physical and Chemical Research, 2.Institute for Materials Research, Tohoku University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[LP5-1] Optical properties of isoelectronically P-doped GaN Epilayers Grown by Gas Source Molecular Beam Epitaxy

F. S. Juang, Y. G. Hong, M. H. Kim, C. W. Tu, W. C. Lai, J. Tsai (1.Department of Electro-optics Engineering, National Huwei Institute of Technology, 2.Department of Electrical and Computer Engineering, University of California at San Diego, 3.South Epitaxy Corporation, Tainan Science-based industry Park)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P6-1] Amorphous Silicon/Silicon-Carbide Separated Absorption and Multiplication Region Doped Superlattice Avalanche Photodiode

Neng-Fu Shih, Wen-Jung Chuang, Cha-Shin Lin, Jyh-Wong Hong (1.Department of Electrical Engineering, Hsiuping Institute of Technology, 2.Deptment of Electrical Engineering, National Central University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P6-2] Avalanche Speed in Thin APDs

Duu Sheng Ong (1.Faculty of Engineering, Multimedia University, Jalan Multimedia)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P6-3] Multiplication characteristics of a-Si:H p-i-n photodiode film in high electric field

Masahiro Akiyama, Masaki Hanada, Kazuaki Sawada, Makoto Ishida (1.Department of Electrical and Electronic Engineering, Toyohashi University of Technology)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P6-4] Pt/Al0.33Ga0.67N Schottky Diode with an Interlayer Buffer

Young-Ro Jung, Sang-Hoon Shin, Jung-Kyu Kim, Jae-Hoon Lee, Yong-Hyun Lee, Myoung-Bok Lee, Jung-Hee Lee, Sung-Ho Hahm (1.Department of Sensor Engineering, Electronics and Electrical Engineering Kyungpook National University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P6-5] Lasing Characteristics of InGaAs/InGaAsP MQW PnpN Optical Thyristor Operating at 1.565 μm

Doo Gun Kim, Hee Hyun Lee, Woon Kyung Choi, Young Wan Choi, Seok Lee, Deok Ha Woo, Young Tae Byun, Jae Hun Kim, Jeong Su Yang, Sun Ho Kim (1.Optoelectronics and Optical Communication Lab., School of Electrical and Electronic Engineering, Chung-Ang University, 2.Photonics Research Center, Korea Institute of Science and Technology)

2002 International Conference on Solid State Devices and Materials |PDF Download