[P10-8] Proposal of a Planar 8F2 1T2C-Type Ferroelectric Memory Cell

Shuu'ichirou Yamamoto, Hyun-Soo Kim, Hiroshi Ishiwara (1.Frontier Collaborative Research Center, Tokyo Institute of Technology)

2002 International Conference on Solid State Devices and Materials |PDF Download

[LP10-1] A Method of Predicting Retention Lifetime of EEPROM by Voltage Acceleration

Yukihiko Watanabe, Yasuiti Mitsushima, Mitsutaka Katada, Hiroyasu Ito (1.Toyota Central R&D Labs., Inc., 2.Device R & D DENSO CORPORATION)

2002 International Conference on Solid State Devices and Materials |PDF Download

[LP10-2] Transient Behavior of Partially Depleted SOI Non-Volatile Memory Cell and Its Impacts on Device Scaling

Alain C. K. Chan, Mansun Chan (1.Department of Electrical and Electronic Engineering The Hong Kong University of Science and Technology)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P11-1] DC and AC Characteristics of RPCVD Grown Modulation-doped SiGe pMOSFETs

Young-Joo Song, Jung-Wook Lim, Sang-Heung Lee, Hyun-Chul Bae, Jin-Young Kang, Kyung-Wan Park, Kyu-Hwan Shim (1.SiGe Device Team, Wireless Communication Device Research Division Electronics and Telecommunications Research Institute)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P11-2] Low-Frequency Noise Analysis of Si/SiGe pMOSFETs for RF Circuits

P. W. Li, W. M. Liao (1.Department of Electrical Engineering, National Central University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P11-3] Uniformity improvement of SiGe HBT by reduced extrinsic base implanted damage

Li-Shyue Lai, Chieh-Shuo Liang, Yung-Tai Tseng, Zing-Wei Pei, Yu-Min Hsu, Peng-Shiu Chen, Shin-Chii Lu, Chung-Ming Liu, Ming-Jinn Tsai (1.Div. of Semiconductor Device Technology, Electronics Research and Service Organization, Industrial Technology Research Institute)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P11-4] Effect of AIN Spacer Layer in AlGaN/GaN Heterojunction Field Effect Transistors

Toshihide Ide, Mitsuaki Shimizu, Shinji Hara, Dong-Hyun Cho, Kulandaivel Jeganathan, Xu-Qiang Shen, Hajime Okumura, Toshio Nemoto (1.Advanced Industrial Science and Technology (AIST), Power Electronics Research Center, 2.R&D Association foe Future Electron Devices (FED), Advanced Power Device laboratory, 3.Department of Science and Technology, Graduate School of Meiji University, 4.Ultra-Low-Loss Power Device Technology Research Body)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P11-5] A Single-Bias C-Band 29 dBm PHEMT MMIC Power Amplifier

H. Z. Liu, C. C. Wang, Y. H. Wang, C. C. Hsu, C. H. Chang, W. Wu, C. L. Wu, C. S. Chang (1.Institute of microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 2.Transcom, Inc.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P11-6] A Comprehensive Analysis of the Kink Phenomenon in Scattering Parameters S22 and S12 of GaInP/GaAs HBTs

Yo-Sheng Lin, Hsing-Yuan Tu, Shey-Shi Lu, Senior Member, IEEE (1.Department of Electrical Engineering, National Chi-Nan University, 2.Department of Electrical Engineering, National Taiwan University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P11-7] A Genetic Algorithm Approach to InGaP/GaAs HBT Parameters Extraction and RF Characterization

Yiming Li, Yen-Yu Cho, Chuan-Sheng Wang, Kuen-Yu Huang (1.National Nano Device Laboratories, 2.National Chiao Tung University, 3.National Tsing Hua University)

2002 International Conference on Solid State Devices and Materials |PDF Download