[P3-2] Topography change with Multilayer Oxidation at SiO2/Si(111) interfaces

D. Hojo, N. Tokuda, K. Yamabe (1.Institute of Applied physics, Yamabe laboratory University of Tsukuba)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P3-3] High Quality Silicon Oxide Film Formed by Diffusion Region PECVD and Oxygen Radical Treatment using Microwave-Excited High-Density Plasma

Hiroaki Tanaka, Zhong Chuanjie, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (1.Graduate School of Engineering, Tohoku University, 2.New Industry Creation Hatchery Center, Tohoku University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P3-4] Novel Nanoprocess for Vertical Double-Gate MOSFET Fabrication by Ion-Bombardment-Retarded Etching

Meishoku Masahara, Takashi Matsukawa, Ken-ichi Ishii, Yongxun Liu, Masayoshi Nagao, Hisao Tanoue, Takashi Tanii, Iwao Ohdomari, Seigo Kanemaru, Eiichi Suzuki (1.Nanoelectronics Research Institute, National Institute of AIST, 2.School of Science and Engineering, Waseda University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P3-5] Interface Defects Responsible for the Negative-Bias Temperature Instability of the Plasma-Nitrided SiON/Si Diodes

Shinji Fujieda, Yoshinao Miura, Motofumi Saitoh (1.Silicon Systems Research Laboratories, NEC Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P3-6] Role of Hydrogen in Negative-Bias Temperature Instability

Jiro Ushio, Kikuo Watanabe, Keiko Kushida-Abdelghafar, Takuya Maruizumi (1.Advanced Research Laboratory, Hitachi, Ltd., 2.Central Research Laboratory, Hitachi, Ltd.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P3-7] Integrity of Gate Oxide grown on Si implanted Si-substrate

Heung-Jae Cho, Kwan-Yong Lim, Jeong-Youb Lee, Dae-Gyu Park, In-Seok Yeo, Jae-Sung Roh (1.Advanced Process Team, Memory R&D Division, Hynix Semiconductor Inc.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P3-8] Novel Nickel Silicide Formation Technique for Sub-50nm MOS Device Application

JeoungChill Shim, Chang-woo Lee, Takeshi Sakaguchi, Hyuckjae Oh, Hoon Choi, Hiroyuki Kurino, Mitsumasa Koyanagi (1.Dept. of Machine Intelligence and Systems Engineering, Tohoku University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P3-9] Formation of Ni Silicide Using Flash Lamp Technology

I. Nishimura, T. Karasawa, T. Owada, M. Yasuhira, T. Arikado (1.Research Dept1, Semiconductor Leading Edge Technologies Inc., 2.Lamp Technology and Engineering Division, Ushio Inc.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P3-10] Impact of Ti Deposition Condition and Subsequent RTA on Contact Resistance of W-Bit Line in sub-micron technology DRAM

Nam-Sung Kim, Il-Gweon Kim, Tae-Seok Kwon, Young-Woo Kweon, Se-Kyeong Choi, Tae-Un Youn, Soo-ik Jang, Joo-Seog Park, Dae-Young Park (1.Device-BC Team, Memory R&D Division, Hynix Semiconductor Inc.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P3-11] Theoretical Studies on the Realistic Low Concentration Doping in Silicon Semiconductors by Accelerated Quantum Chemical Molecular Dynamics Method

Toshiyuki Yokosuka, Katsumi Sasata, Hitoshi Kurokawa, Seiichi Takami, Momoji Kubo, Akira Imamura, Yoshiyuki Kitahara, Masaaki Kanoh, Akira Miyamoto (1.Department of Materials Chemistry, Graduate School of Engineering, Tohoku University, 2.Hiroshima Kokusai Gakuin University, 3.Corporate Manufacturing Engineering Center, Toshiba Corporation, 4.New Industry Creation Hatchery Center, Tohoku University)

2002 International Conference on Solid State Devices and Materials |PDF Download