[E-2-2] Device Scaling and Prospect of GaN FET

Yasuo Ohno, Jin-Ping Ao (1.Department of Electrical and Electronic Engineering, The University of Tokushima, 2.Satellite Venture Business Laboratory, The University of Tokushima)

2002 International Conference on Solid State Devices and Materials |PDF Download

[E-2-3] Drain-current collapse in AlGaN/GaN HEMTs on sapphire and semi-insulating SiC substrates

S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo (1.Research Center for Micro-structure Devices, Nagoya Institute of Technology)

2002 International Conference on Solid State Devices and Materials |PDF Download

[E-3-1] SiGe BiCMOS Technology for Communication Systems

Marco Racanelli, Paul Kempf (1.Jazz Semiconductor)

2002 International Conference on Solid State Devices and Materials |PDF Download

[E-3-2] Suppression of B outdiffusion by C incorporation in ultra-high-speed SiGeC HBTs

Katsuya Oda, Isao Suzumura, Makoto Miura, Eiji Ohue, Reiko Hayami, Akihiro Kodama, Hiromi Shimamoto, Katsuyoshi Washio (1.Central Research Laboratory, Hitachi, Ltd., 2.Musashino Office, Hitachi Device Engineering, Co. Ltd.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[E-3-3] Sub 100 nm Gate Technologies for Si/SiGe Buried Channel RF Devices

Marco Zeuner, Thomas Hackbarth, Mauro Enciso-Aguilar, Frederic Aniel, Hans von Kanel (1.DaimlerChrysler AG, Research Center Ulm, 2.Institut d'Electronique Fondamentale, Paris-Sud University, 3.Laboratorium fur Festkorperphysik, ETH-Zurich)

2002 International Conference on Solid State Devices and Materials |PDF Download

[E-3-4] Influence of SiGe Channel Position and Fowler-Nordheim Stress on 1/f Noise in SiGe pMOSFETs

Young-Joo Song, Sang-Hoon Kim, Jeong-Hoon Kim, Jong-In Song, Kyu-Hwan Shim (1.SiGe Device Team, Wireless Communication Device Research Division Electronics and Telecommunications Research Institute, 2.Dept. of Information and Communications, KJIST)

2002 International Conference on Solid State Devices and Materials |PDF Download

[E-4-1] InP-based HEMT Technology and ICs for High-Speed Data Communications

Y. Nakasha, T. Suzuki, S. Yamaura, H. Kano, K. Sawada, K. Makiyama, T. Takahashi, T. Hirose, N. Hara, M. Takikawa (1.Fujitsu Laboratories Ltd.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[E-4-2] Data Limiting-Amplifier, Data Distributor, and Clock Distributor ICs for 40-Gbit/s-class Optical Communication Systems Using InP HEMTs

Kimikazu Sano, Koichi Murata, Suehiro Sugitani, Hirohiko Sugahara, Takatomo Enoki (1.NTT Photonics Laboratories, NTT Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download

[E-4-3] Double-recessed 0.1-μm-gate InP HEMTs for 40-Gb/s Optical Communication Systems

Shinichi Hoshi, Hironobu Moriguchi, Masanori Itoh, Tomoyuki Ohshima, Isamu Matsuyama, Masanori Tsunotani, Toshihiko Ichioka (1.III-V Devices Department, Optical Components, Oki Electric Industry Co., Ltd.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[E-4-4] 2.2 W/mm GaAs HFET with Field-Modulating Plate Operated at 32 V

Kazuki Ota, Akio Wakejima, Kohji Matsunaga, Masaaki Kuzuhara (1.Photonic and Wireless Devices Research Labs., NEC Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download

428 results (141 - 150)

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