[P5-1] Reduced Gate Leakage in AlGaAs/InGaAs pHEMTs by a Si3N4 Sidewall Planarized Process

Cheng-Kuo Lin, Wen-Kai Wang, Yi-Jen Chan (1.Department of Electrical Engineering, National Central University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P5-2] Low Frequency Noise Sources in AlGaAs/InGaAs HEMTs

S. Nishiyama, T. Iwaki, K. Higuchi (1.Grad. Sch. of Advanced Sciences of Matter Hiroshima University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P5-3] Enhancement and Accumulation Mode Operation of GaAs MISFETs and InAlAs/InGaAs MISHEMTs with nm-Thin Gate Oxide Layers

M. Nasuno, K. Nakamura, Y. Kita, Y. Ohta, K. Iiyama, S. Takamiya (1.Graduate School of Natural Science and Technology, Kanazawa University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P5-4] RIE Gate-recessed InGaP/InGaAs Doped-channel FETs with Various Gate-lengths (0.2 μm～1.0 μm)

Shih-Cheng Yang, Wen-Kai Wang, Cheng-Kuo Lin, Hsien-Chin Chiu, Ming-Jyh Hwu, Yi-Jen Chan (1.Department of Electrical Engineering, National Central University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P5-5] Structural and Optical Properties of AlGaInN Grown by MOVPE

Yasuyuki Kobayashi, Yoshiharu Yamauchi, Naoki Kobayashi (1.NTT Basic Research Laboratories, NTT Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P5-6] Improvement of crystal quality of GaN by modulated molecular beam epitaxy

K-T. Liu, T. Tezuka, S. Sugita, Y. Watari, Y. Horikoshi, Y-K. Su (1.School of Science and Engineering, Waseda University, 2.Department of Electrical Engineering, National Chen Kung University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P5-7] Flat surfaces and interfaces in AlN/GaN heterostructures and superlattices grown by flow-rate modulation epitaxy

Masanobu Hiroki, Naoki Kobayashi (1.NTT Basic Research Laboratories, NTT Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P5-8] Improvement of AlGaN/GaN Heterostructure Field Effect Transistor Characteristics by Using Two-step Ohmic Contact Process

Dong-Hyun Cho, Mitsuaki Shimizu, Toshihide Ide, Byoungrho Shim, Hajime Okumura (1.National Institute of Advanced Industrial Science and Technology (AIST), Power Electronics Research Center (PERC), 2.R&D Association for Future Electron Devices (FED), Advanced Power Device Laboratory, 3.Ultra-Low-Loss Power Device Technology Research Body (UPR))

2002 International Conference on Solid State Devices and Materials |PDF Download

[P5-9] Thermal Stability of Plasma-treated Ohmic Contact to n-GaN

Chien-Chi Lee, Meng-Shin Yeh, Sheng-Di Lin, Chien-Ping Lee, Wei-I Lee, Cheng Ta Kuo (1.Dept. of electronics engineering, National Chiao Tung Univ., 2.Dept. of electrophysics, National Chiao Tung Univ., 3.Advanced Epitaxy Technology Inc.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P5-10] AlGaN/GaN heterostructure MIS-HEMTs with Si3N4 gate insulator

M. Ochiai, M. Akita, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani (1.Department of Quantum Engineering, Graduate School of Engineering, Nagoya University)

2002 International Conference on Solid State Devices and Materials |PDF Download