[C-2-3] Water Absorption into ALD-Al2O3 Films as revealed by Physical Analysis and Electrical Characterization

Masaru Kadoshima, Masayasu Nishizawa, Tetsuji Yasuda, Toshihide Nabatame, Akira Toriumi (1.MIRAI Project, Association of Super-Advanced Electronics Technologies (ASET), 2.MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), 3.Department of Materials Science School of Engineering, University of Tokyo)

2002 International Conference on Solid State Devices and Materials |PDF Download

[C-2-4] Comparison Studies on Oxygen Diffusion Coefficients for ALD-Al2O3 and PLD-HfO2 Films using 18O Isotope

Toshihide Nabatame, Tetsuji Yasuda, Masayasu Nishizawa, Minoru Ikeda, Tsuyoshi Horikawa, Akira Toriumi (1.MIRAI Project, Association of Super-Advanced Electronics Technologies (ASET), 2.MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), 3.Department of Materials Science School of Engineering, University of Tokyo)

2002 International Conference on Solid State Devices and Materials |PDF Download

[C-2-5] New Method for Characterizing Dielectric Properties of High-k Films Using Time-Dependent Open-Circuit Potential Measurement

Koji Kita, Masashi Sasagawa, Kentaro Kyuno, Akira Toriumi (1.Department of Materials Science, Graduate School of Engineering, The University of Tokyo)

2002 International Conference on Solid State Devices and Materials |PDF Download

[D-1-1] Advanced Depleted-Substrate Transistors: Single-gate, Double-gate and Tri-gate

Robert Chau, Brian Doyle, Jack Kavalieros, Doug Barlage, Anand Murthy, Mark Doczy, Reza Arghavani, Suman Datta (1.Components Research, Logic Technology Development, Intel Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download

[D-1-2] High Performance SOI Technology for Advanced Microprocessors

Mario M. Pelella (1.Logic Technology Development, Advanced Micro Devices)

2002 International Conference on Solid State Devices and Materials |PDF Download

[D-1-3] Non-monotonous Transition of SOI History Effect from FD to PD Modes

H. Nakayama, H. Komatsu, S. Shimizu, T. Ohno, K. Takeshita (1.LSI Technology Development Division, Sony Corp.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[D-1-4] Elevated Source/Drain Engineering with 0.22-nm-Rms Smooth Surface Morphology for 90-nm-node Ultrathin-SOI CMOS

K. Sugihara, T. Nakahata, T. Matsumoto, S. Maeda, S. Maegawa, K. Ota, H. Sayama, H. Oda, T. Eimori, Y. Abe, T. Ozeki, Y. Inoue, T. Nishimura (1.Advanced Technology R&D Center, Mitsubishi Electric Corporation, 2.ULSI Development Center, Mitsubishi Electric Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download

[D-1-5] Notable Advantages of High Performance SOI Technology beyond 90nm Generation

Hee-Sung Kang, Chang-Bong Oh, Young-Wug Kim, Kyung-Soo Kim, Kwang-Pyuk Suh (1.Technology Development PJT, System LSI Division, Semiconductor Business, Samsung Electronics Co. Ltd.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[D-2-1] High-Performance 1T1MTJ MRAM Technology with an Amorphous MTJ Material

M. Motoyoshi, K. Moriyama, H. Mori, C. Fukumoto, H. Itoh, H. Kano, K. Bessho, H. Narisawa (1.Technology Development Group, SNC, Sony Corporation, 2.LSI Design Division, Sony Semiconductor Kyushu, 3.MOS Production Division, Sony Semiconductor Kyushu, 4.Group No. 2, Storage Technology Laboratories, Sony Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download

[D-2-2] The Issues and Reliability of High Density FeRAMs

Keum Hwan Noh, Beelyong Yang, Seok Won Lee, Seaung-Suk Lee, Hee-Bok Kang, Young-Ji Park (1.New Device Team, Memory R&D Division, Hynix Semiconductor Inc.)

2002 International Conference on Solid State Devices and Materials |PDF Download