[A-3-4] An Electrostatic-Discharge(ESD) Protection Device with Low Parasitic Capacitance Utilizing a Depletion-Layer-Extended Transistor(DET) for RF-CMOS IC's

T. Ohnakado, S. Yamakawa, A. Furukawa, K. Nishikawa, T. Murakami, Y. Hashizume, K. Sugahara, N. Suematsu, T. Oomori (1.Advanced Technology R&D Center, Mitsubishi Electric Corporation, 2.Information Technology R&D Center, Mitsubishi Electric Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download

[A-4-1] MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels

E. A. Fitzgerald, M. L. Lee, C. W. Leitz, D. A. Antoniadis, A. Lochtefeld, R. Hammond, M. T. Currie, G. Braithwaite, F. Singaporewala, J. Yap, C. J. Vineis, N. D. Gerrish, R. Westhoff, M. T. Bulsara, J. H. Ho, J. R. Hwang, Y. S. Hsieh, T. P. Chen, Anthony Lee, T. Y. Chen, W. Y. Hsieh, P. W. Yen, W. T. Shiau, Y. T. Loh, S. C. Chien, Frank Wen (1.MIT, Department of Materials Science and Engineering, 2.Department of EECS, 3.AmberWave Systems Corporation, 4.UMC)

2002 International Conference on Solid State Devices and Materials |PDF Download

[A-4-2] Experimental Evidence of Low Dislocation Density of SiGe-on-Insulator Substrates Fabricated by Oxidizing SiGe/SOI Structures

N. Sugiyama, Y. Moriyama, T. Tezuka, T. Mizuno, S. Nakaharai, K. Usuda, S. Takagi (1.MIRAI Project, Association of Super-Advanced Electronics Technology (ASET))

2002 International Conference on Solid State Devices and Materials |PDF Download

[A-4-3] Realization of dislocation-free relaxed SiGe-on-Insulator substrates by mesa isolation

Tsutomu Tezuka, Naoharu Sugiyama, Shinich Takagi (1.MIRAI-Project, Association of Super-Advanced Electronics Technology (ASET) Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download

[A-4-4] Low-Temperature Electrical Characteristics of Strained-Si MOSFETs

Nobuyuki Sugii, Katsuyoshi Washio (1.Central Research Laboratory, Hitachi, Ltd.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[A-5-1] Nonvolatile Memory Challenges toward Gigabit and Nano-scale Era and a Nano-scale Flash Cell: PHINES

Sam Pan, C. C. Yeh, Rich Liu, C. Y. Lu (1.Macronix International Co. Ltd.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[A-5-2] Enhanced Tunneling Current Effect for Nonvolatile Memory Applications

Bogdan Govoreanu, Pieter Blomme, Jan Van Houdt, Kristin De Meyer (1.IMEC Leuven, STDI Division, 2.KU Leuven, ESAT-INSYS)

2002 International Conference on Solid State Devices and Materials |PDF Download

[A-5-3] Flash Memory Reliability: an improvement against Erratic Erase phenomena using the Constant Charge Erasing Scheme

Andrea Chimenton, Piero Olivo (1.Dipartimento di Ingegneria, University of Ferrara)

2002 International Conference on Solid State Devices and Materials |PDF Download

[A-5-4] Low Voltage Low Current Flash Memory Using Source Induced Band-to-Band Tunneling Hot Electron Injection to Perform Programming

Liyang Pan, Jun Zhu, Kai Liu, Jianzhao Liu, Ying Zeng, Lei Sun (1.Institute of Microelectronics, Tsinghua University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[A-6-1] Embedded MONOS Nonvolatile Semiconductor Memory Technology

Shin'ichi Minami, Yoshiaki Kamigaki (1.Hitachi Ltd., Semiconductor & Integrated Circuits, 2.Kagawa Univ., Faculty of Eng., Dept. of Advanced Material Science)

2002 International Conference on Solid State Devices and Materials |PDF Download