[D-6-2] Structural Analysis of Bismuth Nanowire by X-ray Standing Wave Method

Akira Saito, Kenji Matoba, Junpei Maruyama, Yuji Kuwahara, Kazushi Miki (1.Osaka Univ., Graduate School of Eng., Dept. of Precision Science and Technology, 2.The National Institute for Materials Science)

2002 International Conference on Solid State Devices and Materials |PDF Download

[D-6-3] Reproducible current switching in copper sulfide films

Toshitsugu Sakamoto, Hiroshi Sunamura, Hisao Kawaura, Tsuyoshi Hasegawa, Tomonobu Nakayama, Masakazu Aono (1.Fundamental Research Labs., NEC Corp., 2.SORST, Japan Science & Technology Corporation (JST), 3.RIKEN)

2002 International Conference on Solid State Devices and Materials |PDF Download

[D-6-4] ALUMINUM NANODOT ARRAY FORMED BY ANODIC OXIDATION AND ITS CONDUCTION PROPERTIES

Shoso Shingubara, Yusuhiko Murakami, Kazunori Morimoto, Wu Guang Ri, Takayuki Takahagi (1.Hiroshima University, Graduate School of ADSM)

2002 International Conference on Solid State Devices and Materials |PDF Download

[D-6-5] The Characteristics of Light Emission by Ballistic Electron Excitation in Nanocrystalline Silicon Device Formed on a p-type Substrate

Yoshiki Nakajima, Hajime Toyama, Akira Kojima, Nobuyoshi Koshida (1.Department of Electrical and Electronic Engineering, Faculty of Technology Tokyo University of Agriculture and Technology)

2002 International Conference on Solid State Devices and Materials |PDF Download

[E-1-1] Submicron InP Bipolar Transistors: Scaling Laws, Technology Roadmaps, Advanced Fabrication Processes

M. J. W. Rodwell, D. Scott, M. Urteaga, M. Dahlstrom, S. Krishnan, Z. Griffith, Y. Wei, N. Parthasarathy, Y-M Kim (1.Department of ECE, University of California)

2002 International Conference on Solid State Devices and Materials |PDF Download

[E-1-2] InP Double-Heterojunction Bipolar Transistors with a Carbon-Doped Graded Base

Kenji Kurishima, Minoru Ida, Noriyuki Watanabe (1.NTT Photonics Laboratories, NTT Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download

[E-1-3] The Effect of Emitter Size Scaling on fmax in InP/InGaAs HBTs

Yoshifumi Ikenaga, Akira Fujihara, Shinichi Tanaka (1.Photonic and Wireless Devices Research Labs., NEC Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download

[E-1-4] Evaluation of base-collector capacitance in submicron buried metal heterojunction bipolar transistors

Yasuyuki Miyamoto, Toshiki Arai, Shigeharu Yamagami, Koji Matsuda, Kazuhito Furuya (1.Department of Physical Electronics, Tokyo Institute of Technology)

2002 International Conference on Solid State Devices and Materials |PDF Download

[E-1-5] High Speed and Uniform Self-Aligned InGaAs/InP HBTs for 40 Gb/s Fiber Optic Communications Applications

Kenji Kotani, Ryuji Yamabi, Takeshi Kawasaki, Masaki Yanagisawa, Seiji Yaegassi, Hiroshi Yano (1.Optoelectronics R&D Laboratories, SUMITOMO ELECTRIC INDUSTRIES, LTD.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[E-2-1] GaAs on Si Technology and Its Application to Power Amplifiers

Thomas Hierl, Mark O'Steen, Ravi Droopad, Oleg Baklenov (1.IQE, Inc., 2.Motorola Physical Sciences Research Labs, Motorola Inc.)

2002 International Conference on Solid State Devices and Materials |PDF Download

428 results (131 - 140)

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