[P3-12] SOI/Bulk Hybrid Wafer Process Using SEG (Selective Epitaxial Growth) Technique for High-End SoC Applications

Hajime Nagano, Tsutomu Sato, Kiyotaka Miyano, Takashi Yamada, Ichiro Mizushima (1.Process & Manufacturing Engineering Center, System LSI Research & Development Center, Semiconductor Company, Toshiba Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P3-13] A New Microwave-Excited Plasma Etching Equipment separated Plasma Excited Region from Etching Process Region

Tetsuya Goto, Masaki Hirayama, Makoto Moriguchi, Shigetoshi Sugawa, Tadahiro Ohmi (1.New Industry Creation Hatchery Center, Tohoku University, 2.Graduate School of Engineering, Tohoku University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P3-14] One Cleaning Solution for Complete CMOS Processes

T. S. Chao, C. H. Yeh, T. M. Pan, T. F. Lei, Y. H. Li (1.Department of Electrophysics, National Chiao Tung University, 2.National Nano Device Labs., 3.Dep. of ESS, National Tsing Hua Uni., 4.Dep. of EE and Institute of Electronics, National Chiao Tung Uni., 5.Merck-Kanto Advanced Chem. Ltd.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P3-15] Low Power CMOS Process Technologies and Characteristics for advanced High Density Mobile DRAM

Chi Hoon Lee, Nam Hyuk Jo, Dong Gun Park, Duk Dong Kang, Dong-Ho Ahn, Chan Seong Hwang, Tae Sung Kim, Hyeong Joon Kim, wonshik Lee (1.School of Materials Science & Engineering, Seoul National University, 2.DRAM Process Architecture Team, Process Development Team, Memory Product & Technology Division, Samsung Electronics Co., Ltd.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P3-16] Quantum Chemical Molecular Dynamics Studies on the Chemical Mechanical Polishing Process of Cu Surface

Toshiyuki Yokosuka, Katsumi Sasata, Hitoshi Kurokawa, Seiichi Takami, Momoji Kubo, Akira Imamura, Akira Miyamoto (1.Department of Materials Chemistry, Graduate School of Engineering, Tohoku University, 2.Hiroshima Kokusai Gakuin University, 3.New Industry Creation Hatchery Center, Tohoku University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P3-17] Atomic-layer deposition of ZrO2 with a Si nitride barrier layer

Hiroyuki Ishii, Toshirou Kidera, Anri Nakajima, Shin Yokoyama (1.Research Center for Nanodevices and Systems, Hiroshima University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P3-18] Effects of Oxidizer Dose and Temperature on Interfacial Silicate Formation and Flatband Voltage in Atomic Layer Deposition of Al2O3

R. Kuse, N. Miyata, M. Kundu, T. Yasuda, K. Iwamoto, K. Kimoto, T. Nabatame, A. Toriumi (1.MIRAI Project, Association of Super-Advanced Electronic Technologies (ASET), 2.MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), 3.Advanced Materials Laboratory, National Institute for Materials Science, 4.Department of Materials Science, School of Engineering, University of Tokyo)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P3-19] Prevention of degradation in poly Si1-xGex/high K structure by controlling Ge content in poly Si1-xGex films

S. K. Kang, J. H. Yoo, B. G. Min, S. W. Nam, D.-H. Ko, H. B. Kang, C. W. Yang, M.-H. Cho (1.Department of Ceramic Engineering, Yonsei University, 2.School of Metallurgy and Material Engineering, Sung Kyun Kwan University, 3.School of Material Science and Engineering, Stanford University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P3-20] Rapid Thermal Formation of Device-quality SiO2 Film by Using Highly Concentrated Ozone Gas at below 600℃

Tetsuya Nishiguchi, Hidehiko Nonaka, Shingo Ichimura, Yoshiki Morikawa, Mitsuru Kekura, Masaharu Miyamoto (1.National Institute of Advanced Industrial Science and Technology, Ultra-fine Profiling Technology Laboratory, 2.Meidensha Corporation, Material & Device Department, Central Research Laboratory)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P3-21] Room Temperature Formation of Thick SiO2 Layers by Anodic Oxidation of Porous Silicon

Fan Xinyu, Hideo Isshiki, Riichiro Saito, Tadamasa Kimura, Satoshi Yamamoto, Cui Rongqiang (1.Department of Electronic Engineering, The University of Electro-Communications, 2.Electron Device Laboratory, Fujikura Ltd., 3.Department of Applied Physics, Shanghai Jiao Tong University)

2002 International Conference on Solid State Devices and Materials |PDF Download