[A-8-4] A Technology of reducing Flicker Noise for ULSI applications

Koutarou Tanaka, Kazufumi Watanabe, Hideki Ishino, Shigetoshi Sugawa, Akinoubu Teramoto Masaki Hirayama, Tadahiro Ohmi (1.Management of Science & Technology Department Graduate School of Engineering, Tohoku University, 2.Department of Electronic Engineering, Graduate school of Engineering, Tohoku University, 3.New Industry Creation Hatchery Center, Tohoku University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[A-9-1] Mobility Reduction due to Remote Charge Scattering in Al2O3/SiO2 Gate-Stacked MISFETs

Shin-ichi Saito, Yasuhiro Shimamoto, Kazuyoshi Torii, Yukiko Manabe, Matty Caymax, Jan Willem Maes, Masahiko Hiratani, Shin'ichiro Kimura (1.Central Research Laboratory, Hitachi, Ltd., 2.IMEC, 3.ASM International NV)

2002 International Conference on Solid State Devices and Materials |PDF Download

[A-9-2] Influences of Gate-edge Structure on Electric Field Strength in MISFETs with High-k Gate Dielectrics

Mizuki Ono, Akira Nishiyama (1.Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download

[A-9-3] SiO2/Si Suboxide Characteristics of Ultra-Thin Gate Oxides Prepared by Room Temperature Anodic Oxidation and Rapid Thermal Oxidation

Yen-Po Lin, Zhi-Hao Chen, Jenn-Gwo Hwu (1.Room 446, Department of Electrical Engineering/Graduate Institute of Electronics Engineering, National Taiwan University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[A-9-4] Effects of Metal Concentration Nonuniformity in Gate Dielectric Silicates on Propagation Delay Time of CMIS Inverters

Mizuki Ono, Tsunehiro Ino, Masato Koyama, Akira Takashima, Akira Nishiyama (1.Advanced LSI Technology Laboratory, Environmental Engineering and Analysis Center, Corporate R & D Center, Toshiba Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download

[B-7-1] Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation

Hideki MURAKAMI, Wataru MIZUBAYASHI, Hirokazu YOKOI, Atsushi SUYAMA, Seiichi MIYAZAKI (1.Graduate School of Advanced Sciences of Matter, Hiroshima University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[B-7-2] Characterization of Ultra Thin Oxynitride Formed by Radical Nitridation with Slot Plane Antenna Plasma

Takuya Sugawara, Toshio Nakanishi, Masaru Sasaki, Shigenori Ozaki, Yoshihide Tada (1.Tokyo Electron Ltd, Technology Development Center, 2.Tokyo Electron Ltd, Kansai Technology Center)

2002 International Conference on Solid State Devices and Materials |PDF Download

[B-7-3] Effect of CF4 Plasma Pretreatment on TiO2 High-k Dielectric Film

Tzu Yun Chang, Hsiao Wei Chen, Tan Fu Lei, Tien Sheng Chao, Chen Jung Wu (1.Department of Electronic Engineering National Chiao Tung University, 2.Department of Electrophysics, National Chaio Tung University, 3.National Nano Device Labs.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[B-7-4] Electrical Characteristics of Rare Earth Gate Oxides Improved by Chemical Oxide and Long Low Temperature Annealing

S. Ohmi, I. Kashiwagi, C. Ohshima, J. Taguchi, H. Yamamoto, J. Tonotani, H. Ishiwara, H. Iwai (1.Tokyo Institute of Technology)

2002 International Conference on Solid State Devices and Materials |PDF Download

[B-8-1] High Selective Etching using HF/H2SO4 Solution

Mami SAITO, Hiroshi TOMITA, Kunihiro MIYAZAKI, Soichi NADAHARA (1.Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download