[B-9-3] A 0.5-V Noise-Shaping A/D Converter Using Low-Threshold FD-SOI Transistors

Yasuyuki Matsuya、Takakuni Douseki (1.NTT Microsystem Integration Laboratories)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-10-1] Quality Comparison of Commercial Silicon-on-Insulator Wafers by Photoluminescence

Michio Tajima (1.Institute of Space and Astronautical Science)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-10-2] Low-Noise and High-Frequency 0.10μm body-tied SOI-CMOS Technology with High-Resistivity Substrate for Low-Power 10Gbps Network LSI

Toshiaki Iwamatsu、Mikio Tujiuchi、Yuuichi Hirano、Takuji Matsumoto、Hiroyuki Takashino、Tatsuhiko Ikeda、Tsutomu Yoshimura、Daniel Chen、Toshihide Oka、Harufusa Kondoh、Takashi Ipposhi、Shigeto Maegawa、Yasuo Inoue、Masahide Inuishi、Yuzuru Ohji (1.Advanced Device Development Dept., Renesas Technology Corp.、2.High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-10-3] Fully Depleted SOI CMOS Device with Raised Source/Drain for 90nm Embedded SRAM Technology

Myoung-Hwan Oh、Chang-Hyun Park、Hee Sung Kang、Chang-Bong Oh、Young-Wug Kim、Kwang-Pyuk Suh (1.Technology Development PT, System LSI Division, Semiconductor Business, Samsung Electronics Co. Ltd.)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-10-4] Body Contact Structure using Elevated Field Insulator for Ultra-Thin Film SOI-MOSFETs

S. Yamagami、R. Koh、H. Wakabayashi、J.-W. Lee、Y. Saito、A. Ogura、M. Narihiro、K. Arai、H. Takemura、Y. Ochiai、K. Takeuchi、T. Mogami (1.Silicon Systems Research Laboratories and R&D Technical Support Center, NEC Corporation)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-10-5L] High Performance 45nm CMOS Technology with 20nm Multi-Gate Devices

Z. Krivokapic、C. Tabery、W. Maszara、Q. Xiang、M.-R. Lin (1.AMD, Technology Research Group)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-10-6L] Double Gate MOSFET by ESS (Empty Space in Silicon) Architecture

Tsutomu Sato、Hideaki Nii、Masayuki Hatano、Yoshimitsu Kato、Kazutaka Ishigo、Keiichi Takenaka、Hisataka Hayashi、Tomoyuki Hirano、Kazuhiko Ida、Takeshi Watanabe、Nobutoshi Aoki、Kazumi Ino、Shigeru Kawanaka、Ichiro Mizushima、Yoshitaka Tsunashima (1.Process & Manufacturing Engineering Center, SoC Research & Development Center、2.Semiconductor Company, Toshiba Corporation)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-1] Mobility in high-κ dielectric based field effect transistors

L-A Ragnarsson、W. Tsai、A. Kerber、P.J. Chen、E. Cartier、L. Pantisano、S. De Gendt、M. Heyns (1.IMEC、2.Intel Corp.、3.Infineon、4.Texas Instruments、5.IBM)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-2] Effect of the Film Composition of HfAlON Gate Dielectric on the Structural Transformation and the Electrical Properties through High-temperature Annealing

Masato Koyama、Yuuichi Kamimuta、Mitsuo Koike、Masamichi Suzuki、Akira Nishiyama (1.Advanced LSI Technology Laboratory, Toshiba Corporation)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-3] Projection of Mobility Degradation in HfAlOx /SiO2 nMOSFET towards the Reduction of Interfacial Oxide Thickness

N. Yasuda、H. Hisamatsu、H. Ota、K. Iwamoto、K. Tominaga、K. Yamamoto、W. Mizubayashi、N. Yamagishi、M. Ohno、S. Migita、Y. Morita、T. Horikawa、T. Nabatame、A. Toriumi (1.MIRAI-ASET, AIST、2.MIRAI-ASRC, AIST、3.Department of Materials Science, The University of Tokyo)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード