Si(100)

Jun Yamasaki、Nobuo Tanaka、Osamu Nakatsuka、Akira Sakai、S. Zaima、Y. Yasuda (1.Center for Integrated Research in Science and Engineering (CIRSE), Nagoya Univ.、2.Dept. of Crystalline Materials Science, Graduate School of Eng., Nagoya Univ.、3.Center for Cooperative Research in Advanced Science & Technology (CCRAST), Nagoya Univ.)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-2-6] Impact of NiSi Thermal Instability on Junction Shallowing Characterized with Damage-free n+/p Silicon Diodes

Masakatsu Tsuchiaki、Kazuya Ohuchi、Chie Hongo (1.Corporate Research & Development Center, Toshiba Corporation.、2.SoC Research & Development Center, Semiconductor Company, Toshiba Corporation)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-3-1] Strained Si MOSFETs on SiGe-on-Insulator (SGOI) for High Performance CMOS Technology

K. Rim、B.H. Lee、A. Mocuta、K. Jenkins、S. Bedell、H. Chen、D. Sadana、M. Gribelyuk、J. Ott、K. Chan、L. Shi、J. Chu、D. Boyd、P. Mooney、P. O’Neil、E. Leobandung、J.J. Welser (1.IBM Semiconductor Research and Development Center (SRDC) Research Division, T. J. Watson Research Center、2.Microelectronics Division)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-3-2] Fabrication of Ultra-Thin Strained Ge-on-Insulator Substrate by Ge-Condensation Technique

Shu Nakaharai、Tsutomu Tezuka、Naoharu Sugiyama、Yoshihiko Moriyama、Shin-ichi Takagi (1.MIRAI project, Association of Super-Advanced Electronics Technology (ASET))

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-3-3] Impact Ionization in Uniaxially Strained-Si MOSFET

Naoya Watanabe、Yasuhiro Maeda、Mika Nishisaka、Tanemasa Asano (1.Center for Microelectronic Systems, Kyushu Institute of Technology)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-3-4] Quantum Confinement Effect of Ultrathin-SOI on double-gate-nMOSFETs

Hiroshi Watanabe、Ken Uchida、Atsuhiro Kinoshita (1.Advanced LSI Technology Laboratory, Toshiba Corp.)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-4-1] Variable Body Effect Factor FD SOI MOSFET for Ultra-Low Power VTCMOS Applications

T. Ohtou、T. Nagumo、T. Hiramoto (1.Institute of Industrial Science, University of Tokyo)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-4-2] Novel SOI MOSFETs with Buried Back-Gate

Hyuckjae Oh、Hoon Choi、Takeshi Sakaguchi、JeoungChill Shim、Hiroyuki Kurino、Mitsumasa Koyanagi (1.Dept. of Bioengineering and Robotics , Tohoku University、2.Venture Business Laboratory, Tohoku University)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-4-3] Modeling of Fully-depleted SOI Device Variation

Hirotaka Komatsubara、Koichi Kishiro、Yasuaki Kawai、Noriyuki Miura、Koichi Fukuda (1.System LSI Research Division, Oki Electric Industry Co., Ltd.、2.Miyagi Oki Electric Industry Co., Ltd.)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-4-4] Temperature Dependence of Threshold Voltage and Hot Carrier Degradation of Dynamic Threshold SOI-pMOSFETs

Yao-Jen Lee、Tien-Sheng Chao、Chun-Yang Huang、Horng-Chih Lin、Tiao-Yuan Huang (1.Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University、2.Department of Electrophysics, National Chiao Tung University、3.National Nano Device Labs.)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード