[A-9-4] High Performance Strained Si/SiGe N-channel MOSFETs: Impact of Alloy Composition and Layer Architecture

SH Olsen、LS Driscoll、KSK Kwa、S Chattopadhay、AG O'Neill (1.School of Electrical, Electronic and Computer Engineering, University of Newcastle, U.K.)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-10-1] High Performance Poly-Si Device with Thin Gate Oxide Film Grown by Plasma Oxidation Technology

Fuminobu Imaizumi、Tomohiko Hayashi、Katsuji Ishii、Akinobu Teramoto、Masaki Hirayama、Shigetoshi Sugawa、Tadahiro Ohmi (1.The New Industry Creation Hatchery Center, Tohoku University、2.Graduate school of Engineering, Tohoku University)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-10-2] A Novel High Performance Power MOSFET with Split well and Split Poly Structure

Feng-Tso Chien、Kou-Way Tu、Shin-Tzung Su、Ching-Ling Cheng、Dung Jen-Huie、Chung-Yuan Kung、Yen-Chih Huang (1.Dept. of Electronic Engineering, Feng Chia University、2.R&D Dept., Chino-Excel Technology Corp.、3.Dept. of Electrical Engineering, Chung Hsing University)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-10-3] Optimization of The Ultra-Low Dark Current CMOS Image Sensor Cell Using n+ Ring Reset

Po-Hao Huang、Ya-Chin King (1.Microelectronic Laboratory, Semiconductor Technology Application Research (STAR) Group Department of Electrical Engineering, National Tsing-Hua University)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-1] Current FeRAM Technology Developments and Scaling towards 3-D Capacitor Cells

Dirk J. Wouters (1.IMEC)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-2] 32Mb Chain FeRAM - An Overview

Daisaburo Takashima、Thomas Rohr (1.FeRAM Development Alliance, Toshiba Corp. Yokohama, Japan、2.Infineon Technologies Japan K.K., Yokohama, Japan)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-3] A proposal of new ferroelectric gate field effect transistor memory based on ferroelectric-insulator interface conduction

Gen Hirooka、Minoru Noda、Masanori Okuyama (1.Division of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-4] Long-Term Stabilization of Sense Signals in a Non-Destructive Readout FeRAM by Intentional Modification of the Polarization Hysteresis Curve for Low Voltage Applications

T. Yamada、Y. Kato、S. Koyama、Y. Shimada (1.Semiconductor Company, Matsushita Electric Industrial Co., Ltd.)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-5] A Low Dielectric Constant Sr2(Ta1-x,Nbx)2O7 Thin Film Controlling the Crystal Orientation on IrO2 Substrate for One Transistor Type Ferroelectric Memory Device

Ichirou Takahashi、Hiroyuki Sakurai、Atsuhiko Yamada、Tetsuya Goto、Masaki Hirayama、Akinobu Teramoto、Shigetoshi Sugawa、Tadahiro Ohmi (1.Graduate School of Engineering, Tohoku University、2.New Industry Creation Hatchery Center, Tohoku University)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-2-1] Novel Capacitor Structure Using Sidewall Spacer for Highly Reliable FRAM Device

H. H. Kim、J. H. Park、Y. J. Song、N. W. Jang、H. J. Joo、S. K. Kang、S. H. Joo、S. Y. Lee、Kinam Kim (1.Advanced Technology Development Team, Memory Division, Device Solution Network, Samsung Electronics Co. Ltd.)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード