The Japan Society of Applied Physics

463件中(71 - 80)

[B-7-1] Low Tinv (≤ 1.8 nm) Metal-Gated MOSFETs on SiO2 Based Gate Dielectrics for High Performance Logic Applications

V. Ku、R. Amos、A. Steegen、C. Cabral, Jr.、V. Narayanan、P. Jamison、P. Nguyen、Y. Li、M. Gribelyuk、Y. Wang、J. Cai、A. Callegari、F. McFeely、F. Jamin、K. Wong、E. Wu、A. Chou、D. Boyd、H. Ng、M. Ieong、C. Wann、R. Jammy、W. Haensch (1.IBM Semiconductor Research and Development Center、2.IBM T.J. Watson Research Center)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-8-2] Pre-amorphization and co-implantation suitability for advanced PMOS devices integration

Radu Surdeanu、Bartek J. Pawlak、Richard Lindsay、Mark van Dal、Gerben Doornbos、Charles J.J. Dachs、Youri V. Ponomarev、Josine J. Loo、Kirklen Henson、Marcel A. Verheijen、Monja Kaiser、Xavier Pages、Malgorzata Jurczak、Peter A. Stolk (1.Philips Research Leuven、2.IMEC、3.Philips Research Laboratories、4.ASM International、5.now at Philips Semiconductors)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-8-3] Kinetics of Boron Activation by Flash Lamp Annealing

K. Yamashita、M. Noguchi、H. Nishimori、T. Ida、M. Yoshioka、T. Kusuda、T. Arikado、K. Okumura (1.Semiconductor Leading Edge Technologies, Inc.、2.Research and Development Center, Lamp Company, Ushio Inc.、3.Research and Development Center, Dainippon Screen MFG. Co. Ltd.、4.Research Center for Advanced Science and Technology, The University of Tokyo)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

463件中(71 - 80)