[B-3-1] Integrating Diffusionless Anneals Into Advanced CMOS Technologies

R. Surdeanu、R. Lindsay、S. Severi、A. Satta、B.J. Pawlak、A. Lauwers、C.J.J. Dachs、K. Henson、S. McCoy、J.C. Gelpey、X. Pages (1.Philips Research Leuven、2.IMEC、3.Vortek Industries、4.ASM International)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-2] Formation of Nickel Self-Aligned Silicide by Using Cyclic Deposition Method

Koichi Terashima、Yoshinao Miura、Nobuyuki Ikarashi、Makiko Oshida、Kenzo Manabe、Takuya Yoshihara、Masayasu Tanaka、Hitoshi Wakabayashi (1.System Devices Research Laboratories, NEC Corporation、2.R&D Support Center, NEC Corporation)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-3] Germanium-induced Modulation of Work Function and Impurity Segregation Effect in Fully-Ni-germanosilicide (Ni(Si1-xGex)) Gate

Yoshinori Tsuchiya、Atsuhiro Kinoshita、Junji Koga (1.Advanced LSI Technology Laboratory, Toshiba Corp.)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-4] Reverse CoSi2 Thermal Stability and Digitized Sheet Resistance Increase in Sub-90nm Poly-Si Lines

Cheng-Yao Lo、Yuan-Ching Peng、Yen-Ming Chen、Shyue-Shyh Lin、Wei-Ming Chen (1.Advanced Logic-1, Logic Technology Division, Taiwan Semiconductor Manufacturing Company, Ltd.)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-4-1] Device Design Consideration for 50 nm DRAM Using the Bulk FinFET

K. R. Han、B. G. Choi、T. Park、E. Yoon、J.-H. Lee (1.School of Electrical Engineering and Computer Science, Kyungpook National University、2.School of Materials Science and Engineering, Seoul University)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-4-2] Highly Manufacturable 64M bit Ultra Low Power SRAM Using a Novel 3-Dimensional S3 (Stacked Single-crystal Si) Cell Technology

W.S Cho、H. Lim、J.H. Jang、Y.H. Kang、J.H. Moon、C.D. Yeo、K.H. Kwak、B.H. Choi、B.J. Hwang、W.R. Jung、S.J. Kim、J.H. Kim、J.H. Na、J.H. Jeong、S.M. Jung、Kinam. Kim (1.Advanced Technology Development Team, Semiconductor R&D Center, Memory Division Samsung Electronics Co.)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-4-3] Re-examination of Impact of Intrinsic Dopant Fluctuations on SRAM Static Noise Margin

Fumihiko Tachibana、Toshiro Hiramoto (1.Institute of Industrial Science, University of Tokyo)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-4-4] Improvements and Analysis of Neutron Induced Soft Error and Latch-up in High Speed Full CMOS 6T SRAM Products up to 65nm Technology

Soon -Moon Jung、Hoon Lim、Wonseok Cho、Jaehun Jeong、Youngseop Rah、Jaekyun Park、Keunho Lee、Jiyeon Lee、Kyungsik Cha、Chulsoon Chang、Youngchul Jang、Kinam Kim (1.R&D Center, Samsung Electronics Kiheung-Eup)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-1] Material Selection for the Metal Gate/High-k Transistors

Y. Akasaka、K. Miyagawa、A. Kariya、H. Shoji、T. Aoyama、S. Kume、M. Shigeta、O. Ogawa、K. Shiraishi、A. Uedono、K. Yamabe、T. Chikyow、K. Nakajima、M. Yasuhira、K. Yamada、T. Arikado (1.Semiconductor Leading Edge Technologies, Inc. (Selete)、2.Tsukuba University、3.National Research Institute of Material Science、4.Waseda University)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-2] A Novel Dual-Metal Gate Integration Process for Sub-1nm EOT HfO2 CMOS Devices

J.F. Kang、C. Ren、H.Y. Yu、X.P. Wang、M-F. Li、D.S.H. Chan、Y-C. Yeo、Y.Y. Wang、D.-L. Kwong (1.Institute of Microelectronics, Peking University、2.Silicon Nano Device Lab, Dept. of ECE, National University of Singapore、3.Dept. of ECE, The University of Texas at Austin)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード