[J-5-4] Mechanism of Threshold Voltage Reduction and Hole Mobility Enhancement in pMOSFETs Employing Sub-1nm EOT HfSiON by Use of Substrate Fluorine Ion Implantation

Seiji Inumiya、Akira Uedono、Seiichi Miyazaki、Shingo Ohtsuka、Takeo Matsuki、Tetsunori Wada、Takayuki Aoyama、Keisaku Yamada、Yasuo Nara (1.Semiconductor Leading Edge Technologies, Inc. (Selete)、2.Univ. of Tsukuba、3.Hiroshima Univ.、4.Waseda Univ.)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-6-1] Quantitative Evaluation of Interface Trap Density in Ge-MIS Interfaces

Noriyuki Taoka、Keiji Ikeda、Yoshimi Yamashita、Naoharu Sugiyama、Shin-ichi Takagi (1.MIRAI-ASRC, AIST Tsukuba West 7、2.MIRAI-ASET, AIST Tsukuba West 7、3.The University of Tokyo)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-6-2] Fabrication of SiO2/Ge MIS structures by plasma oxidation of ultrathin Si films grown on Ge

Hiroshi Kumagai、Masato Shichijo、Hiroto Ishikawa、Takuya Hoshii、Satoshi Sugahara、Yasutaka Uchida、Shinichi Takagi (1.Graduate School of Frontier Science, The Univ. of Tokyo、2.Teikyo University of Science and Technology)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-6-3] Strong Fermi-level Pinning of Wide Range of Work-function Metals at Valence Band Edge of Germanium

T. Nishimura、K. Kita、A. Toriumi (1.Department of Materials Engineering, School of Engineering, The University of Tokyo)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-7-1] Optimization of Hafnium Zirconate (HfZrOx) Gate Dielectric for Device Performance and Reliability

R. I. Hegde、D. H. Triyoso、S. Kalpat、S. B. Samavedam、J. K. Schaeffer、E. Luckowski、C. Capasso、D. C. Gilmer、M. Raymond、D. Roan、J. Nguyen、L. La、E. Hebert、X-D. Wang、R. Gregory、R. S. Rai、J. Jiang、T. Y. Luo、B. E. White Jr. (1.Freescale Semiconductor, Inc., Austin Silicon Technology Solutions (ASTS))

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-7-2] Current Transportation Mechanism and Interface States Characterization of Sputtered Gd2O3 Gate Dielectrics for ULSI Application

Woei Cherng Wu、Chao Sung Lai、Kuan Ti Wang、Jer Chyi Wang、Tien Sheng Chao (1.Department of Electronic Physics, National Chiao Tung University、2.Department of Electronic Engineering, Chang Gung University、3.Nanya Technology Corporation)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-7-3] The Effect of Nitrogen on Thermal Diffusion in HfO2-based Gate Dielectrics

Norihiko Takahashi、Takahiro Yamasaki、Chioko Kaneta (1.Fujitsu Laboratories Limited)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-7-4] The Highly Reliable Evaluation of Mobility in an Ultra Thin High-k Gate Stack with an Advanced Pulse Measurement Method

Ryosuke Iijima、Mariko Takayanagi、Masato Koyama、Akira Nishiyama (1.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation、2.Center for Semiconductor Research & Development, Toshiba Corporation Semiconductor Company)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-7-5] Intrinsic Electronically-Active Defects in Transition Metal Elemental Oxides

Gerald Lucovsky、Hyungtuk Seo、Les B Fleming、Marc D Ulrichand、Jan Luning (1.NC State University, Department of Physics、2.Stanford Synchrotron Radiation Laboratory)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-8-1] Highly scalable and WF-tunable Ni(Pt)Si/SiON TOSI-gate CMOS devices obtained in a CMP-less integration scheme

M. Muller、G. Bidal、A. Mondot、S. Denorme、C. Fenouillet-Beranger、F. Boeuf、D. Aime、M. Rafik、P. Gouraud、T. Kormann、G. Chabanne、A. Zauner、G. Braeckelmann、S. Bonnetier、D. Barge、C. Laviron、A. Toffoli、A. Tarnowka、S. Pokrant、T. Skotnicki (1.Philips Semiconductors、2.STMicroelectronics、3.Freescale、4.CEA-LETI)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード