[F-10-1] Magnetic Domain Wall Dynamics in (Ga,Mn)As (Invited)

F. Matsukura¹ (1.Tohoku Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[F-10-2] Spin-dependent Resonant Tunneling in III-V-based Ferromagnetic-Semiconductor Quantum Heterostructures (Invited)

S. Ohya^1,2 (1.Univ. of Tokyo, 2.PRESTO-JST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[F-10-3] Coherent Spin Conduction in Multilayer Graphene

H. Goto^1,2, A. Kanda^1,2, T. Sato¹, S. Tanaka¹, Y. Ootuka¹, S. Odaka^3,4, H. Miyazaki^2,3, K. Tsukagoshi^2,3, Y. Aoyagi^2,4 (1.Univ. of Tsukuba, 2.CREST-JST, 3.AIST, 4.Tokyo Tech., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-1-1] GaN on Silicon RF Devices: Current Status and Future Directions (Invited)

K. Linthicum¹, A. Hanson¹, E. Piner¹, A. Chaudhari¹, T. Nichols¹, W. Johnson², I. Kizilyalli² (1.Nitronex Corp., 2.Alta Devices Inc., USA)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-1-2] AlGaN/GaN/AlGaN Double Heterostructures on 4 inch Si Substrates for High Breakdown Voltage Field-Effect Transistors with Low On-Resistance

D. Visalli^1,2, J. Derluyn¹, S. Degroote¹, M. Leys¹, K. Cheng^1,2, M. Germain¹, M. Van Hove¹, G. Borghs^1,2 (1.IMEC, 2.Katholieke Univ. Leuven, Belgium)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-1-3] Mesa-gate AlGaN/GaN HEMTs having Narrow-width Channels

K. Ohi¹, T. Tamura¹, J. Kotani¹, T. Hashizume¹ (1.Hokkaido Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-1-4] Device Characteristics of MOCVD-Grown InAlN/GaN HEMTs on AlN/Sapphire Template

J. Selvaraj¹, L. Selvaraj¹, M. Miyoshi², Y. Kuraoka², M. Tanaka², T. Egawa¹ (1.Nagoya Inst. of Tech., 2.NGK Insulators Ltd., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-1-5] Gate Recessed AlGaN/GaN based Normally-Off HEMTs for High Frequency Operation

S. Maroldt¹, C. Haupt¹, W. Pletschen¹, S. Müller¹, R. Quay¹, O. Ambacher¹ (1.IAF, Germany)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-1-6] High-frequency Characteristics and Effective Saturation Electron Velocity of AlGaN/GaN Heterojunction Field Effect Transistors with AlN or SiN Passivation

N. Tanaka¹, Y. Sumida², H. Kawai², T. Suzuki¹ (1.JAIST, 2.POWDEC K. K., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-1-7] Improved Microwave Performance of AlGaN/GaN MOS-HEMT with Stack Gate HfO₂/Al₂O₃ Structure

Y. Z. Yue¹, Y. Hao¹, J. C. Zhang¹ (1.Xidian Univ., China)

2008 International Conference on Solid State Devices and Materials |PDF Download

587 results (241 - 250)

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