[I-9-6] Fabrication of Air-Stable High-On/Off-Ratio Organic Static-Induction Transistor with Nano-Triode Array

Y. Takenouchi¹, S. Masuda¹, M. Sakai¹, K. Kudo¹, M. Nakamura¹ (1.Chiba Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[I-10-1] Self-Organized Organic Field-Effect Transistors on a Plastic Substrate

T. Minari¹, M. Kano², T. Miyadera³, S. D. Wang³, Y. Aoyagi¹, K. Tsukagoshi^3,4 (1.RIKEN, 2.Dai Nippon Printing Co., Ltd., 3.AIST, 4.CREST-JST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[I-10-2] Enhancement of Carrier Mobility by Controlling the Initial Pentacene Growth Modes on SiO₂ Dielectric Layer

C. Jiang¹, Q. Qi¹, A. Yu¹ (1.National Center for Nanoscience and Tech., China)

2008 International Conference on Solid State Devices and Materials |PDF Download

[I-10-3] Low Voltage and Small Subthreshold Swing HfLaO/Pentacene Organic TFTs

M. F. Chang¹, P. T. Lee¹, A. Chin^1,2 (1.National Chiao Tung Univ., 2.Nano-Electronics Consortium of Taiwan, Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[I-10-4] Suppression of the Performance Dispersion of Organic Field-effect Transistors Employing Annealing Process

K. Fukuda¹, T. Sekitani¹, T. Someya¹ (1.Univ. of Tokyo, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[I-10-5] Analysis of Interface Trap Density of Organic-Organic Interface with Capacitance-Voltage Characteristics

S. H. Jeong¹, S. M. Kim¹, C. K. Song¹ (1.Dong-A Univ., Korea)

2008 International Conference on Solid State Devices and Materials |PDF Download

[I-10-6] Carrier Injection and Accumulation of Pentacene Field Effect Transistor with P(VDF-TeFE) Gate Insulator

R. Tamura¹, S. Yoshita¹, E. Lim¹, T. Manaka¹, M. Iwamoto¹ (1.Tokyo Tech., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-1-1] Overview and Future Challenges of DRAM Technologies (Invited)

G. Jeong¹, K. Kim¹ (1.Samsung Electronics Co., Ltd., Korea)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-1-2] 1TBulk eDRAM using Gate-Induced Drain-Leakage (GIDL) Current for High Speed and Low Power Applications

S. Puget^1,2, G. Bossu^1,2, F. Berthollet^1,3, P. Mazoyer¹, J. M. Portal², P. Masson⁴, R. Bouchakour², T. Skotnicki¹ (1.STMicroelectronics, 2.IM2NP, 3.INL-INSA Lyon, 4.LEAT, France)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-1-3] Current Flow Mechanism in Schottky-Barrier MOSFETs and Application to the 1T-DRAM

S. J. Choi¹, J. W. Han¹, S. Kim¹, C. Choi², M. Jang³, Y. K. Choi¹ (1.KAIST, 2.Chonbuk Univ., 3.ETRI, Korea)

2008 International Conference on Solid State Devices and Materials |PDF Download

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