[A-9-2] Millisecond Rapid Thermal Annealing of Si Wafer Induced by High Density Thermal Plasma Jet Irradiation

H. Furukawa¹, S. Higashi¹, T. Okada¹, H. Murakami¹, S. Miyazaki¹ (1.Hiroshima Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[A-9-3] Carbon-Free Tantalum-Nitride Film from Ammonia and Extremely Diluted Pentakis-dimethylamino-Tantalum; Effect of Silicon Incorporation to nMIS-FET Metal-Gate

Y. Sugita¹, T. Aoyama¹, Y. Nara¹ (1.Selete, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[A-9-4] Metalorganic Chemical Vapor Deposition of High-Dielectric-Constant Praseodymium Oxide Films using a Liquid Cyclopentadienyl Precursor

H. Kondo¹, S. Sakurai¹, A. Sakai², M. Ogawa¹, S. Zaima¹ (1.Nagoya Univ., 2.Osaka Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[A-9-5] Extended EOT Scalability of HfON/SiON Gate Stack Down to 0.57 nm with High Carrier Mobility by Post-Deposition Annealing

D. Ishikawa¹, S. Kamiyama¹, E. Kurosawa¹, T. Aoyama¹, Y. Nara¹ (1.Selete, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[B-1-1] III-V CMOS: Challenges and Opportunities (Invited)

J. A. del Alamo¹, D. H. Kim¹, N. Waldron¹ (1.MIT, USA)

2008 International Conference on Solid State Devices and Materials |PDF Download

[B-1-2] Enhancement-Mode In_0.53Ga_0.47As n-MOSFET with Self-aligned Gate-first Process and CVD HfAlO Gate Dielectric

J. Lin¹, S. J. Lee¹, H. J. Oh¹, G. K. Dalapati², D. Z. Chi², G. Q. Lo³, D. L. Kwong³ (1.National Univ. of Singapore, 2.Inst. of Materials Res. and Eng., 3.Inst. of Microelectronics, Singapore)

2008 International Conference on Solid State Devices and Materials |PDF Download

[B-1-3] High Mobility sub-60nm Gate Length Germanium-On-Insulator Channel pMOSFETs with Metal Source/Drain and TaN MIPS Gate

K. Ikeda¹, Y. Yamashita¹, M. Harada¹, T. Yamamoto¹, S. Nakaharai¹, N. Hirashita¹, Y. Moriyama¹, T. Tezuka¹, N. Taoka², I. Watanabe³, N. Hirose³, N. Sugiyama¹, S. Takagi^2,4 (1.MIRAI-ASET, 2.MIRAI-ASRC, 3.NICT, 4.Univ. of Tokyo, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[B-1-4] Evaluation of Electron and Hole Mobility at Identical MOS Interfaces by using Metal Source/Drain GOI MOSFETs

K. Morii¹, S. Dissanayake¹, S. Tanabe¹, R. Nakane¹, M. Takenaka¹, S. Sugahara², S. Takagi¹ (1.Univ. of Tokyo, 2.Tokyo Tech., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[B-1-5] Source-to-Drain vs. Band-to-Band Tunneling in Ultra-Scaled DG nMOSFETs with Alternative Channel Materials

Q. Rafhay¹, R. Clerc¹, G. Pananakakis¹, G. Ghibaudo¹ (1.IMEP, France)

2008 International Conference on Solid State Devices and Materials |PDF Download

[B-2-1] Recent Progress in Carbon Nanotube Electronics - Modeling, Materials, Devices, Circuits, and Interconnects (Invited)

H. S. P. Wong¹ (1.Stanford Univ., USA)

2008 International Conference on Solid State Devices and Materials |PDF Download

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