[B-5-2] Hot-Carrier AC Lifetime Enhancement due to Wire Resistance Effect (WRE) in 45nm CMOS Circuits

N. Mizuguchi¹, K. Takeuchi¹, H. Tobe¹, P. Lee¹, K. Ishibashi¹ (1.Renesas Tech. Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[B-5-3] Stress Memorization Technique (SMT) for pMOS by Dopant Confinement Layer (DCL)

H. Ohta¹, K. Ikeda¹, H. Fukutome¹, M. Tajima², K. Okabe², K. Ohkoshi², S. Satoh¹ (1.Fujitsu Labs. Ltd., 2.Fujitsu Microelectronics Ltd., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[B-5-4] New High-Voltage and Reliable RF LDMOS Fabricated with Standard Foundry CMOS Technology

H. Xiao¹, R. Huang¹, L. Zhang¹, F. Song¹, Y. Ai¹, R. Wang¹, D. Wu¹, H. Liao¹, W. Wong², Y. Wang¹ (1.Peking Univ., 2.SMIC, China)

2008 International Conference on Solid State Devices and Materials |PDF Download

[B-6-1] High Mobility SiGe Channel pMOSFETs Epitaxially Grown on Si (100) Substrates with HfSiO₂ High-k Dielectric and Metal Gate

J. Oh¹, P. Majhi¹, C. Y. Kang¹, R. Jammy¹, R. Joe², T. Sugawara², Y. Akasaka², T. Kaitsuka², T. Arikado², M. Tomoyasu² (1.SEMATECH, USA, 2.Tokyo Electron Ltd., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[B-6-2] Thin-Metal Inserted Single-phase Ni-FUSI(MISF) and High-k Gate Stack for Productive LSTP CMOS Application

Y. Yamamoto¹, Y. Nishida¹, K. Satoh¹, T. Kawahara¹, S. Sakashita¹, M. Mizutani¹, S. Yamanari¹, Y. Ariyama¹, Y. Miyagawa¹, N. Murata¹, T. Sakai¹, M. Inoue¹, J. Yugami¹, S. Ogino¹, K. Eikyu¹, T. Hayashi¹, S. Endo¹, T. Yamashita¹, H. Oda¹, Y. Inoue¹, H. Fujimoto², Y. Sato², T. Oosuka², A. Tsudumitani², Y. Moriyama², K. Nakanishi², J. Hirase², T. Yamada², H. Ogawa², Y. Mori² (1.Renesas Tech. Corp., 2.Matsushita Electric Industrial Co., Ltd., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[B-6-3] CMOSFET Featuring Atomically Flat Gate Insulator Film/Silicon Interface on (100) Orientation Surface

R. Kuroda¹, A. Teramoto¹, T. Suwa¹, Y. Nakao¹, S. Sugawa¹, T. Ohmi^1,2 (1.Tohoku Univ., 2.WPI Research Center, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[B-6-4] A Comprehensive Study of Coulomb Scattering Mobility in Short-Channel Process-Induced Strain NMOSFETs

W. P. N. Chen^1,2, P. Su², K. Goto¹ (1.Taiwan Semiconductor Manufacturing Co., Ltd., 2.National Chiao Tung Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[B-7-1] Analysis of V^th Fluctuation at High Temperature using Takeuchi Plot

T. Tsunomura¹, A. Nishida¹, K. Takeuchi¹, S. Inaba¹, A. T. Putra³, S. Kamohara¹, K. Terada², T. Hiramoto^1,3, T. Mogami¹ (1.MIRAI-Selete, 2.Hiroshima City Univ., 3.Univ. of Tokyo, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[B-7-2] Process Architecture for Spatial and Temporal Variability Improvement of SRAM Circuits at the 45nm Node

N. Planes¹, V. Huard¹, C. Laviron², O. Callen¹, J. Bonnouvrier¹, O. Menut¹, S. Haendler¹, M. Haond¹, F. Boeuf¹ (1.STMicroelectronics, 2.CEA-LETI, France)

2008 International Conference on Solid State Devices and Materials |PDF Download

[B-7-3] Modeling of MOSFET Characteristics using In-line Inspection Data and Statistical Explanation of Global Variation

M. Kurihara¹, M. Izawa¹, J. Tanaka¹, K. Kawai², R. Yoshifuku², T. Maruyama², T. Imbe², Y. Koide², N. Fujiwara² (1.Hitachi, Ltd., 2.Renesas Tech. Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download