[H-9-1] Correlation Measurement of Time-dependent Potentials in a Semiconductor Point Contact

H. Kamata^1,2, T. Ota¹, T. Fujisawa^1,2 (1.NTT Corp., 2.Tokyo Tech., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-9-2] High Field Electron Transport in the Ballistic T-Branch Junction

H. Irie¹, R. Sobolewski¹ (1.Univ. of Rochester, USA)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-9-3] Fabrication and Characterization of CdF₂/CaF₂ Resonant Tunneling Floating Gate Metal-oxide-semiconductor Field Effect Transistor Structures

M. Watanabe¹, T. Wada¹ (1.Tokyo Tech., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-9-4] An Analysis of THz Oscillator using Negative Differential Resistance Dual Channel Transistor (NDR-DCT) and Integrated Antenna

K. Furuya¹, S. Hori², T. Sugaya¹, K. Komori¹, M. Mori¹, M. Asada³ (1.AIST, 2.Shibaura Inst. of Tech., 3.Tokyo Tech., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-9-5] Theoretical Analysis of Electrorefractive Effect in GaInNAs/GaAs Five Layer Asymmetric Coupled Quantum Well (FACQW) for 1.3 micron Phase Modulator

M. Fukuoka¹, T. Toya¹, Y. Sawai¹, T. Arakawa¹, K. Tada² (1.Yokohama National Univ., 2.Kanazawa Inst. of Tech., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-9-6] Electrical Properties and Photo-responses of SiNWs with Selective Anchored Gold Nanoparticles by using Scanning Probe Bond Breaking Nanolithography

C. H. Wu¹, J. T. Sheu², T. S. Chao² (1.MingDao Univ., 2.National Chiao Tung Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-9-7] Structure and Conductance of Platinum Wires of Single-Atom Width Studied by In Situ Transmission Electron Microscopy

K. Monna¹, T. Matsuda¹, T. Kizuka¹ (1.Univ. of Tsukuba, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-10-1] Thickness-dependent Resistance Change of Dual-gated Thin Graphite Films

H. Miyazaki^1,5, S. Odaka^1,2, S. Tanaka³, H. Goto^3,5, K. Tsukagoshi^1,4,5, A. Kanda^3,5, Y. Ootuka³, Y. Aoyagi^2,4,5 (1.AIST, 2.Tokyo Tech., 3.Univ. of Tsukuba, 4.RIKEN, 5.CREST-JST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-10-2] Graphene Nanoribbon Transistors and Resonant Tunneling Diodes

G. Liang¹, H. Teong¹, K. Lam¹, N. Neophytou², D. E. Nikonov³ (1.National Univ. of Singapore, Singapore, 2.Purdue Univ., 3.Intel Corp., USA)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-10-3] Sound Emission from Nanocrystalline Silicon Device under Operation of Electroluminescence

B. Gelloz¹, T. Shibata¹, N. Koshida¹ (1.Tokyo Univ. of Agr. and Tech., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

587 results (321 - 330)

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