[B-10-1] Accuracy Assessment of Charge-Based Capacitance Measurement for Nanoscale MOSFET Devices

H. Zhao^1,2, S. C. Rustagi¹, F. Ma^1,2, G. S. Samudra², N. Singh¹, G. Q. Lo¹, D. L. Kwong¹ (1.Inst. of Microelectronics, 2.National Univ. of Singapore, Singapore)

2008 International Conference on Solid State Devices and Materials |PDF Download

[B-10-2] Anomalous RTS Extractions from a Very Large Number of n-MOSFETs using TEG with 0.47 Hz - 3.0 MHz Sampling Frequency

K. Abe¹, T. Fujisawa¹, A. Teramoto¹, S. Watabe¹, S. Sugawa¹, T. Ohmi¹ (1.Tohoku Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[B-10-3] Accurate Channel Thermal Noise Modeling in BSIM4

J. Jeon¹, J. Lee¹, C. H. Park², J. S. Yoon³, H. Lee³, H. Oh³, B. G. Park¹, H. Shin¹ (1.Seoul National Univ., 2.Kwangwoon Univ., 3.Samsung Electronics Co., Ltd., Korea)

2008 International Conference on Solid State Devices and Materials |PDF Download

[B-10-4] Impacts of Random Dopant Fluctuation on Transient Characteristics in CMOS Inverters: A Device Simulation Study

S. Toriyama¹, K. Matsuzawa¹, N. Sano² (1.Toshiba Corp., 2.Univ. of Tsukuba, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[B-10-5] Discrete Dopant Fluctuated Transient Behavior in 16-nm-Gate CMOS

Y. Li¹, C. H. Hwang¹, T. C. Yeh¹, H. W. Cheng¹, T. Y. Li¹ (1.National Chiao Tung Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[C-1-1] Plastic Material Solutions for Advanced Thin Packages (Invited)

H. Tanaka¹ (1.Sumitomo Bakelite Co., Ltd., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[C-1-2] 3D-Stacking Process for Si Interposer with Integrated Thin-film Capacitors

A. Shibuya¹, A. Ohuchi¹, K. Takemura¹ (1.NEC Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[C-1-3] A New Scaled Through Si Via with Polymer Fill for 3D Wafer Level Packaging

D. S. Tezcan¹, F. Duval¹, O. Luhn¹, P. Soussan¹, B. Swinnen¹ (1.IMEC, Belgium)

2008 International Conference on Solid State Devices and Materials |PDF Download

[C-1-4] Aberration Corrected Microscopy and Spectroscopy for Pico-meter Characterization of Device Materials - Coductance Quantization of Metal Nanowire and AtomicChain - (Invited)

K. Takayanagi¹, Y. Kurui¹, Y. Ohshima¹, Y. Tanishiro¹ (1.Tokyo Tech., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[C-1-5] In Situ High-resolution Transmission Electron Microscopy of Electromigration in Nanometer-sized Copper Contacts

H. Aoki¹, T. Kizuka¹ (1.Univ. of Tsukuba, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

587 results (71 - 80)

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