[J-8-1] Overview and Future Challenges of Advanced Materials for FeRAM (Invited)

H. Funakubo¹, T. Watanabe¹, N. Menou¹, T. Yamada¹ (1.Tokyo Tech., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-8-2] Hydrogen-and-Stress-Induced de-lamination in an IrO₂ Layer of FRAMs

J. H. Kim¹, D. J. Jung¹, H. H. Kim¹, Y. K. Hong¹, E. S. Lee¹, S. Y. Kim¹, J. Y. Jung¹, H. K. Koh¹, D. Y. Choi¹, S. K. Kang¹, H. Kim¹, W. W. Jung¹, J. Y. Kang¹, Y. M. Kang¹, S. Y. Lee¹, H. S. Jeong¹ (1.Samsung Electronics Co., Ltd., Korea)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-8-3] Current Development Status and Future Challenges of Spin Torque Transfer MRAM Technology (Invited)

K. Ito¹, J. Hayakawa¹, K. Miura^1,2, M. Yamanouchi¹, R. Takemura¹, T. Kawahara¹, S. Ikeda², H. Hasegawa², T. Meguro², R. Sasaki², H. Takahashi¹, H. Matsuoka¹, H. Ohno² (1.Hitachi, Ltd., 2.Tohoku Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-8-4] Improvement of Switching Disturbance in Spin-Transfer Torque MRAM

D. K. Kim¹, S. C. Oh¹, W. Kim¹, K. T. Nam¹, Y. Kim¹, J. Jeong¹, S. Y. Lee¹, J. E. Lee¹, I. S. Yeo¹, U. I. Chung¹, J. T. Moon¹ (1.Samsung Electronics Co., Ltd., Korea)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-9-1] Interpretation of Resistive Switching in NiO Thin Films (Invited)

I. K. Yoo¹, B. S. Khang¹, M. J. Lee¹, Y. D. Park¹, Y. S. Park¹ (1.Samsung Electronics Co., Ltd., Korea)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-9-2] Resistive Switching Ion-Plug Memory for 32-nm Technology Node and Beyond

K. Ono¹, K. Kurotsuchi¹, Y. Fujisaki¹, R. Takemura¹, M. Terao¹, N. Takaura¹ (1.Hitachi, Ltd., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-9-3] RRAM Technology for Fast and Low-Power Forming/Switching

Y. Tamai¹, H. Shima², H. Muramatsu², H. Akinaga², Y. Hosoi¹, S. Ohnishi¹, N. Awaya¹ (1.Sharp Corp., 2.AIST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-9-4] Low-Voltage and Fast-Speed Forming Process of Tungsten Oxide Resistive Memory

K. P. Chang¹, W. C. Chien^1,2, Y. C. Chen¹, E. K. Lai^1,3, S. C. Tsai¹, S. H. Hsieh¹, Y. D. Yao², J. Gong³, K. Y. Hsieh¹, R. Liu¹, C. Y. Lu¹ (1.Macronix International Co., Ltd., 2.National Chiao Tung Univ., 3.National Tsing Hua Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-9-5] Multi-Level Switching Characteristics for WO_X Resistive RAM (RRAM)

W. C. Chien^1,2, K. P. Chang¹, Y. C. Chen¹, E. K. Lai^1,3, H. Mähne¹, Y. D. Yao^2,4, P. Lin², J. Gong³, S. H. Hsieh¹, K. Y. Hsieh¹, R. Liu¹, C. Y. Lu¹ (1.Macronix International Co., Ltd., 2.National Chiao Tung Univ., 3.National Tsing Hua Univ., 4.Tatung Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-9-6] The Effect of Current Compliance on the Resistive Switching Behaviors in TiN/ZrO₂/Pt Memory Device

B. Sun¹, L. F. Liu¹, N. Xu¹, B. Gao¹, Y. Wang¹, D. D. Han¹, X. Y. Liu¹, R. Q. Han¹, J. F. Kang¹ (1.Peking Univ., China)

2008 International Conference on Solid State Devices and Materials |PDF Download

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