[P-3-6] RF Small-Signal and Noise Modeling for SOI Dynamic Threshold Voltage MOSFETs

S. C. Wang^1,2, P. Su¹, K. M. Chen², S. Y. Huang³, C. C. Hung³, V. Liang³, C. Y. Tzeng³, G. W. Huang² (1.National Chiao Tung Univ., 2.National Nano Device Labs., 3.UMC, Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-3-7] Origin of Enhanced Impact Ionization in Strained-SiGe pMOSFETs

P. C. Huang¹, T. K. Kang², Y. H. Sa², S. L. Wu², S. J. Chang¹ (1.National Cheng Kung Univ., 2.Cheng Shiu Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-3-8] A Vertical-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Fully-Oxidized Silicon Beam Isolation

A. Sugimura¹, K. Okuyama¹, H. Sunami¹ (1.Hiroshima Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-3-9] Layout Dependence of SiGe Strain Effect and STI Induced Defects in 45nm p-PMOSFETs with Strain SiGe Source/Drain

C. Y. Cheng¹, Y. K. Fang¹, J. C. Hsieh², Y. M. Sheu², H. Hsia², W. M. Chen², S. S. Lin², C. S. Hou² (1.National Cheng Kung Univ., 2.Taiwan Semiconductor Manufacturing Co., Ltd., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-3-10] Impact of Ge Content on Flicker Noise Behavior in Strained-SiGe pMOSFETs

C. W. Kuo¹, S. L. Wu², H. Y. Lin¹, S. H. Chen¹, C. Y. Wu², C. H. Lin², S. J. Chang¹ (1.National Cheng Kung Univ., 2.Cheng Shiu Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-3-11] Demonstration of High Mobility Holes in a Strained Ge Channel Grown on a Novel Thin and Relaxed SiGe/LT-SiGe/Si(001) Virtual Substrate

M. Myronov¹, D. R. Leadley¹, Y. Shiraki² (1.Univ. of Warwick, UK, 2.Musashi Inst. of Tech., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-3-12] Analysis of Threshold Voltage Variations of FinFETs : Separation of Short Channel Effects and Space Charge Effects

Y. Kobayashi¹, K. Tsutsui¹, K. Kakushima¹, P. Ahmet¹, V. R. Rao², H. Iwai¹ (1.Tokyo Tech., Japan, 2.Indian Inst. of Tech. Bombay, India)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-3-13] Extraction of Vertical, Lateral Locations and Energies of Hot-Electrons-Induced Traps Through the Random Telegraph Noise

D. Kang¹, S. Yang¹, J. Kim², D. Lee², B. G. Park¹, Y. Son¹, J. D. Lee¹, H. Shin¹ (1.Seoul National Univ., 2.Samsung Electronics Co., Ltd., Korea)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-3-14] Hot-Carrier-Induced Degradation in P-type High-Voltage DEMOS Transistors

J. F. Chen¹, J. R. Lee¹, S. Y. Chen¹, K. S. Tian¹, K. M. Wu², C. M. Liu² (1.National Cheng Kung Univ., 2.Taiwan Semiconductor Manufacturing Co., Ltd., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-3-15] Modeling of Substrate Current of MOSFETs under Different Gate Biases and Temperatures

S. Y. Chen¹, C. H. Tu¹, M. C. Wang^1,2, S. H. Wu³, Z. W. Jhou³, C. J. Chang³, J. Ko³, H. S. Haung¹ (1.National Taipei Univ. of Tech., 2.Minghsin Univ. of Sci. and Tech., 3.UMC, Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

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