[F-7-1] Current Status and Future Challenges of Resistive Switching Memories

W. C. Chien¹, F. M. Lee¹, Y. Y. Lin¹, Y. C. Chen¹, M. H. Lee¹, H. L. Lung¹, K. Y. Hsieh¹, C. Y. Lu¹ (1.Macronix International Co., Ltd. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[F-7-2] Investigation of Forming and Its Controllability in Novel HfO₂-Based 1T1R 40nm-Crossbar RRAM Cells

B. Govoreanu¹, S. Kubicek¹, G. Kar¹, Y. Y. Chen^1,2, V. Paraschiv¹, M. Rakowski^1,2, R. Degraeve¹, L. Goux¹, S. Clima¹, N. Jossart¹, C. Adelmann¹, O. Richard¹, T. Raes¹, D. Vangoidsenhoven¹, T. Vandeweye¹, H. Tielens¹, K. Kellens¹, K. Devriendt¹, N. Heylen¹, S. Brus¹, B. Verbrugge¹, L. Pantisano¹, H. Bender¹, G. Pourtois¹, J. A. Kittl¹, D. J. Wouters^1,2, L. Altimime¹, M. Jurczak¹ (1.imec, 2.Katholieke Univ. Leuven , Belgium)

2011 International Conference on Solid State Devices and Materials |PDF Download

[F-7-3] CMOS Compatible Hf-based RRAM with Ultra-low Switching Currents/Power

F. Zhang¹, X. Li², B. Gao¹, B. Chen¹, P. Huang¹, Y. Fu¹, Y. Chen¹, L. Liu¹, J. Kang¹, N. Singh², G. Q. Lo², D. L. Kwong² (1.Peking Univ. , China, 2.A*STAR , Singapore)

2011 International Conference on Solid State Devices and Materials |PDF Download

[F-7-4L] Alloy and Strain Induced Multivalency in Magneli Phase Ti_nO_2n-3 and TiO₂-HfO₂ Alloys: Singlet Negative Ion States and Non-Linear Metallic Conduction

G. Lucovsky¹, J. W. Kim¹ (1.NC State Univ. , USA)

2011 International Conference on Solid State Devices and Materials |PDF Download

[F-8-1] 50nm HfO₂ ReRAM with 50-Times Endurance Enhancement by Set/Reset Turnback Pulse & Verify Scheme

K. Higuchi¹, K. Miyaji¹, K. Johguchi¹, K. Takeuchi¹ (1.Univ. of Tokyo , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[F-8-2] Hetero-device complementary resistive switches with high switch speed and reliability for cross point array applications

D. Lee¹, J. Park¹, S. Jung¹, G. Choi¹, J. M. Lee¹, M. Siddik¹, J. Shin¹, S. Kim¹, J. Woo¹, H. Hwang¹ (1.Gwangju Inst. of Sci. and Tech. , Korea)

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[F-8-3] Flexible One Diode-One Resistor Crossbar Resistive-Switching Memory

C. W. Hsu¹, J. J. Huang¹, Y. M. Tseng¹, T. H. Hou¹, W. H. Chang², W. Y. Jang², C. H. Lin² (1.National Chiao Tung Univ., 2.Winbond Electronics Corp. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[F-8-4] Formation free low power resistive switching memory using IrO_x/AlO_x/W cross-point with excellent uniformity and multi level operation

W. Banerjee¹, S. Z. Rahaman¹, S. Maikap¹ (1.Chang Gung Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[F-8-5] Highly Uniform and Reliable Switching Properties in NbO_x Based RRAM Devices

S. M. Sadaf¹, X. Liu¹, S. H. Choudhury¹, J. Shin¹, J. Woo¹, M. Siddik¹, H. Hwang¹ (1.Gwangju Inst. of Sci. and Tech. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF Download

[F-9-1] Record resistance ratio and bipolar/unipolar resistive switching scenario using novel Cu/GeO_x/W memory device

S. Z. Rahaman¹, S. Maikap¹, S. K. Ray^1,2, H. Y. Lee³, W. S. Chen³, F. T. Chen³, M. J. Kao³, M. J. Tsai³ (1.Chang Gung Univ. , Taiwan, 2.Indian Inst. of Tech. , India, 3.ITRI , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download