[P-7-25] Enhanced Light Sensitivity of Thin SOI Photodiode by Metal Line-and-Space Grating of Various Materials

H. Satoh¹, H. Inokawa¹, A. Ono¹ (1.Shizuoka Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-7-26] Wavelength Sensitive PIN Photodetector Using Guided Mode Resonance

K. W. Lai¹, S. D. Lin¹, Y. J. Fu¹, Y. S. Li¹ (1.National Chiao Tung Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-7-27] Active Layer Thickness Dependence of the Bandwidth of Amorphous Silicon Photoconductors

T. Maruyama¹, H. Otosaka¹, K. Iiyama¹ (1.Kanazawa Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-7-28] A Visible Light Blinded Photo-detector With an ITO/ZST/Si MIS Device Structure

K. E. Chiu¹, Y. Y. Lin¹, Y. C. Sun¹, M. C. Shih¹, W. H. Lan¹ (1.National Univ. of Kaohsiung , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-7-29] GaN-based MIS Ultra-violet Photodetectors with the CsF current suppressing Layer

C. H. Chen¹, C. M. Tsai¹, C. F. Cheng¹, S. F. Yen¹, P. Y. Su¹ (1.Cheng Shiu Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-7-30] Performance Improvement of 850nm Si Photodiodes by Symmetric Layout in Standard 0.18 μm CMOS Technology

F. P. Chou¹, G. Y. Chen¹, C. W. Wang¹, Z. Y. Li¹, Y. C. Liu¹, W. K. Huang¹, Y. M. Hsin¹ (1.National Central Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-8-1] Selective-area growth of 4-color InAs-QD ensembles for broadband light source

K. Takeuchi¹, N. Ozaki¹, S. Ohkouchi², N. Ikeda³, Y. Sugimoto³, K. Asakawa⁴, R. A. Hogg⁵ (1.Wakayama Univ., 2.NEC Corp., 3.NIMS, 4.Univ. of Tsukuba , Japan, 5.Univ. of Sheffield , UK)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-8-2] Characterization of highly stacked InGaAs quantum dots structures grown with ultrahigh-rate MBE growth technique

F. Tanoue^1,2, H. Sugawara¹, K. Akahane², N. Yamamoto² (1.Tokyo Metropolitan Univ., 2.NICT , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-8-3] Field Emission Properties of 10-nm Pillars of Organics Fabricated by Pt particles and Plasma Etching

T. Suzuki¹, K. Takeda^1,4, H. Kondo¹, K. Ishikawa¹, Y. Setsuhara^2,4, M. Shiratani^3,4, M. Sekine^1,4, M. Hori^1,4 (1.Nagoya Univ., 2.Osaka Univ., 3.Kyushu Univ., 4.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-8-4] Self-induced InAs nanowires grown on natural-oxide-covered Si(111) by molecular-beam epitaxy

S. Wang¹, X. Yu¹, H. Wang¹, J. Zhao¹ (1.Inst. of Semiconductors, Chinese Academy of Sci. , China)

2011 International Conference on Solid State Devices and Materials |PDF Download

741 results (591 - 600)

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