[P-3-2] Saturation Behavior in the Generation of Interface Traps by Hot-Carrier Stress in Nanoscale MOSFETs

M. Hu¹, T. Yamane¹, T. Tsuchiya¹ (1.Shimane Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-3-3] Investigation of Temperature Dependence on DC and Low-Frequency Noise Characteristics in Uniaxial Tensile Strained nMOSFETs

S. C. Tsai¹, S. L. Wu², J. F. Chen¹, S. J. Chang¹, C. Y. Chang¹, P. C. Huang¹, C. Y. Wu², M. S. Chen³, Y. C. Cheng³, O. Cheng³ (1.National Cheng Kung Univ., 2.Cheng Shiu Univ., 3.United Microelectronics Corp. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-3-4] Impact of Interface State Density on MOSFET Local Oxide Capacitance Degradation during Hot-Carrier Stress

I. Starkov¹, H. Ceric¹ (1.TU Wien , Austria)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-3-5] The Effect of La₂O₃ Capping Layer Thickness on Hot Carrier Degradation of n-MOSFETs with High-k/Metal Gate Stack

D. W. Kim¹, S. H. Lee¹, C. G. Kim¹, T. K. Oh², B. K. Kang¹ (1.Pohang Univ. Sci. Tech., 2.Hynix Semiconductor Inc. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-3-6] Characterization of Oxide Traps in 28 nm pMOSFETs with Σ-Shaped SiGe-S/D by Utilizing Random Telegraph Noise (RTN)

B. C. Wang¹, S. L. Wu², S. J. Chang¹, C. T. Huang³, O. Cheng³ (1.National Cheng Kung Univ., 2.Cheng Shiu Univ., 3.United Microelectronics Corp. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-3-7] Hot-Carrier Effects on High-frequency Characteristics of RF LDMOS Transistors

K. M. Chen¹, Z. W. Mou², H. C. Kuo², C. S. Chiu¹, B. Y. Chen¹, W. D. Liu¹, M. Y. Chen³, Y. C. Yang³, K. L. Wang³, G. W. Huang^1,2 (1.National Nano Device Labs., 2.National Chiao Tung Univ., 3.United Microelectronics Corp. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-3-8] Impact of OFF-state Degradation under Dynamic Stress on Reliability of Nanoscale n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors at Elevated Temperature

N. H. Lee¹, K. J. Kim¹, H. W.Kim², B. K.Kang¹ (1.POSTECH, 2.Samsung Electronics Corp. Ltd. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-3-9] Modeling Subthreshold Current and Threshold Voltage of Fully-Depleted Double-gate Junctionless(J-less) Transistors

Z. M. Lin¹, H. C. Lin^1,2, K. M. Liu³, T. Y. Huang¹ (1.National Chiao Tung Univ., 2.Labs of National Nano Device, 3.National Dong Hwa Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-3-10] Integration of InGaAs Nanowire Vertical Surrounding-Gate Transistors on Si

K. Tomioka^1,2, M. Yoshimura¹, T. Fukui¹ (1.Hokkaido Univ., 2.PRESTO-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-3-11] Body Channel Type Vertical MOSFET to Suppress Gate Leakage Current

T. Sasaki^1,2, T. Endoh^1,2 (1.Tohoku Univ., 2.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

741 results (501 - 510)

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