[P-1-10] Analysis of Raman Spectra from Offset Spacer Region of Si-MOSFET Structure using Simulated Stress Tensor and Absorbed Light Intensity by FDTD Simulation

A. Satoh¹, T. Tada¹, V. Poborchii¹, T. Kanayama¹, S. Satoh², H. Arimoto¹ (1.AIST, 2.Fujitsu Semiconductor Ltd. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-1-11] Chemical Bonding States of As in Si Shallow Junctions Detected by Soft X-ray Photoelectron Spectroscopy and their Profiles

J. Kanehara¹, Y. Miyata¹, H. Nohira², Y. Izumi³, T. Muro³, T. Kinoshita³, P. Ahmet¹, K. Kakushima¹, K. Tsutsui¹, T. Hattori¹, H. Iwai¹ (1.Tokyo Tech, 2.Tokyo City Univ., 3.JASRI/Spring-8 , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-1-12] Comprehensive Understanding of Flatband Voltage Shift Based on Energy Band Alignment of the Whole Metal/high-k/SiO₂/Si Stack

X. Wang¹, W. Wang¹, K. Han¹, J. Zhang², X. Ma¹, J. Xiang¹, D. Chen¹, T. Ye¹ (1.Chinese Academy of Sci., 2.North China Univ. of Tech. , China)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-1-13] Lateral Large-Grained Low-Temperature Polycrystalline Silicon-Germanium Thin-Film Transistors on Glass Substrate

Y. Okabe¹, K. Kondo¹, J. Suzuki², K. Kitahara², A. Hara¹ (1.Tohoku Gakuin Univ., 2.Shimane Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-1-14] Enhanced Sidewall Growth (ESG) process: towards PEALD with conformality above 100%

S. Ueda¹, A. Fukazawa¹, H. Fukuda¹, N. Kobayashi¹ (1.ASM Japan K.K. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-1-15] Mean time to failure distribution in thin oxide film: Observation at nano and devices scale and modelling using a filamentary growth model

P. Delcroix^1,2, S. Blonkowski¹, M. Kogelschatz², M. Rafik¹ (1.STMicroelectronics, 2.CNRS , France)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-1-16] Electrical Characteristics of Back Gated FET on a Wrinkle Free Graphene Channel

C. H. Cho¹, S. K. Lim¹, C. G. Kang¹, Y. G. Lee¹, H. J. Hwang¹, E. Park¹, B. H. Lee¹ (1.Gwangju Inst. of Sci. and Tech. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-1-17] Novel activation method of B by soft X-ray undulator

T. Fukuoka¹, A. Heya¹, N. Matsuo¹, K. Kanda¹, T. Noguchi² (1.Univ. of Hyogo, 2.Univ. of the Ryukyus , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-1-18] Impact of Zirconia addition for ALD Hafina in HKMG Device Fabricated GF vs. GL

C. K. Chiang^1,3, C. H. Wu², H. Y. Huang¹, J. F. Lin³, C. L. Yang³, J. Y. Wu³, S. J. Wang¹ (1.National Cheng Kung Univ., 2.Chung Hua Univ., 3.United Microelectronics Corp. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-1-19L] Fermi Level Depinning for Metal/Germanium Schottky Junction by CF₄ Plasma Treatment

J. R. Wu¹, C. Y. Hou¹, M. L. Wu¹, C. C. Lin¹, L. L. Chen¹, Y. H. Wu¹ (1.National Tsing Hua Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

741 results (471 - 480)

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