[P-5-14] An Experimental Verification of the Design Margin Analysis Method for Even-Stage Ring Oscillators with CMOS Latch

Y. Hirakawa¹, N. Mimura¹, A. Motomura¹, K. Nakamura¹ (1.Kyushu Inst. of Tech. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-5-15] Analysis of Cascode Structure for 60GHz Amplifier Design in 65nm CMOS

Q. Bu¹, N. Li¹, H. Asada¹, K. Okada¹, A. Matsuzawa¹ (1.Tokyo Tech , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-5-16] MOS Power Cells for Output Power Levels of 17 to 23 dBm

R. L. Wang¹, C. H. Liu², C. C. Chuang², C. H. Tu³, Y. Z. Juang³, Y. K. Su² (1.National Kaohsiung Normal Univ., 2.National Cheng Kung Univ., 3.National Chip Implementation Center , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-5-17] Power Amplifier for E-band Wireless Link Using 0.1μm GaAs pHEMT

M. Kang¹, B. Kim¹, K. Kim¹, W. Byun¹ (1.ETRI , Korea)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-6-1] Hot Carrier Effect on RF Characteristics of High-k/Metal Gate SiGe Channel pMOSFETs

E. Y. Jeong¹, H. C. Sagong¹, D. Y. Choi¹, C. W. Sohn¹, J. S. Lee¹, C. Y. Kang², Y. H. Jeong¹ (1.POSTECH , Korea, 2.SEMATECH , USA)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-6-2] Effect of Etch Damage on Device performance in Trench-gate and Mesa-gate GaN Vertical MOSFET

K. W. Kim¹, S. D. Jung¹, M. K. Kwon¹, R. H. Kim¹, D. S. Kim¹, K. S. Im¹, H. S. Kang¹, C. H. Won¹, K. I. Jang¹, J. H. Lee¹, K. S. Kim² (1.Kyungpook National Univ., 2.Samsung LED , Korea)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-6-3] Electrical and Photo-response Properties of Titanium Contacts on n-type N-face and Ga-face GaN Layer for Vertical Power Devices Prepared by ELOG and Laser Lift-off

D. K. Kim¹, C. J. Lee¹, Y. J. Kwon¹, J. Y. Yun¹, D. S. Kim¹, H. B. Lee², J. H. Lee¹, S. H. Hahm¹ (1.Kyungbook National Univ., 2.Samsung LED , Korea)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-6-4] Plasma-Induced Damage of GaN and Its Recovery by Atomic Hydrogens at a Room Temperature

Y. Lu¹, S. Chen¹, R. Kometani¹, K. Takeda¹, H. Kondo¹, T. Egawa², K. Ishikawa¹, H. Amano¹, M. Sekine¹, M. Hori¹ (1.Nagoya Univ., 2.Nagoya Inst. of Tech. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-6-5] Temperature Dependent Characteristics of Fe/n-GaN Schottky Diodes

R. Adari¹, B. Sarkar¹, T. Patil¹, D. Banerjee^1,2, P. Suggisetti¹, S. Ganguly¹, D. Saha¹ (1.Center of Excellence in Nanodectronics, 2.IITB-Monash Research Academy, CSE Building, IIT Bombay , India)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-6-6] Air-Gap Capacitance-Voltage Analyses of InP Surfaces after Wet and Dry Processes

T. Yoshida¹ (1.Shimane Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

741 results (551 - 560)

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