[J-6-3] Inherently fast spin relaxation of exciton in photo-excited self-assembled quantum dots

Y. H. Liao¹, J. I. Climente², S. J. Cheng¹ (1.National Chiao-Tung Univ. , Taiwan, 2.Universitat Jaume I, Castello , Spain)

2011 International Conference on Solid State Devices and Materials |PDF Download

[J-6-4] Wavelength tunable single-photon source with a side gate

T. Nakaoka^1,2,3, Y. Tamura¹, T. Miyazawa¹, K. Watanabe¹, Y. Ota¹, S. Iwamoto¹, Y. Arakawa¹ (1.Univ. of Tokyo, 2.PRESTO-JST, 3.Sophia Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[J-6-5] Donor-location-dependent RTS Observed by Trapping and Detrapping of a Photoexcited Electron by a Single Donor

A. Udhiarto¹, D. Moraru¹, T. Mizuno¹, M. Tabe¹ (1.Shizuoka Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[J-7-1] Rashba spin-orbit interaction due to wavefunction penetration in In_0.05Ga_0.95As/GaAs quantum dots

S. M. Huang¹, A. O. Badrutdinov^1,2, L. Serra^3,4, T. Kodera^5,6, T. Nakaoka^5,6,7, N. Kumagai^5,6, Y. Arakawa^5,6, D. A. Tayurskii², K. Kono¹, K. Ono^1,7 (1.RIKEN , Japan, 2.Kazan Federal Univ. , Russia, 3.IFISC, 4.Univ. de les Illes Balears , Spain, 5.Univ. of Tokyo, 6.Sophia Univ., 7.ICORP-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[J-7-2] Coulomb diamonds and Two-electron Spin Blockade in Cotunneling Regime of Serial Vertical Triple Quantum Dot Device

S. Amaha^1,2, W. Izumida³, T. Hatano^2,4, S. Teraoka^2,5, K. Ono^1,2, K. Kono¹, S. Taucha^2,5, J. Gupta⁶, D. G. Austing⁶ (1.RIKEN, 2.ICORP-JST, 3.Tohoku Univ., 4.ERATO-JST, 5.Univ. of Tokyo , Japan, 6.NRC-Canada , Canada)

2011 International Conference on Solid State Devices and Materials |PDF Download

[J-7-3] Electrostatic tuning of plasmonic cavities for edge magnetoplasmons

M. Hashisaka¹, N. Kumada², H. Kamata^1,2, K. Washio¹, K. Muraki², T. Fujisawa¹ (1.Tokyo Tech, 2.NTT Basic Res. Labs. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[J-7-4] Effect of Free Carriers on Dopant-induced Surface Potential in SOI-FETs

M. Anwar¹, R. Nowak^1,2, D. Moraru¹, R. Jablonski², T. Mizuno¹, M. Tabe¹ (1.Shizuoka Univ. , Japan, 2.Warsaw Univ. of Tech. , Pol)

2011 International Conference on Solid State Devices and Materials |PDF Download

[J-7-5] Nanoparticle Single-Electron Transistor with Metal Bridged Top-Gate Electrodes

Y. Azuma^1,2, S. Suzuki^1,2, K. Maeda^1,2, N. Okabayashi^1,2, D. Tanaka^2,3, T. Teranishi^2,3, M. R. Buitelaar⁴, C. G. Smith⁴, Y. Majima^1,2,5 (1.Tokyo Tech, 2.CREST-JST, 3.Univ. of Tsukuba , Japan, 4.Univ. of Cambridge , UK, 5.Sunchon National Univ. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF Download

[J-8-1] Atomic physics and quantum optics using circuits behaving as tunable artificial atoms

F. Nori^1,2 (1.RIKEN , Japan, 2.Univ. of Michigan , USA)

2011 International Conference on Solid State Devices and Materials |PDF Download

[J-8-2] Steady-state solution for dark states using a three-level system in coupled quantum dots

T. Tanamoto¹, K. Ono², F. Nori^2,3 (1.Toshiba Corp., 2.RIKEN , Japan, 3.Univ. of Michigan , USA)

2011 International Conference on Solid State Devices and Materials |PDF Download