[E-1-2] 1.2 nm-EOT Al₂O₃/Ge Gate Stack with GeO_x-free Interface

T. Tabata^1,2, C. H. Lee^1,2, T. Nishimura^1,2, S. K. Wang^1,2, K. Kita^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo, 2.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-1-3] Effective Passivation of Interface Dipole in TiN-Gate Ge-MOS Capacitor with Ultrathin SiO₂/GeO₂ Bilayer by Nitrogen Incorporation

K. Sakamoto¹, Y. Iwamura¹, K. Yamamoto¹, H. Yang¹, D. Wang¹, H. Nakashima¹ (1.Kyushu Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-1-4] Defect Control in Germanium Oxide Film Thermally Grown on Germanium Substrate

Y. Oniki¹, T. Ueno¹ (1.Tokyo Univ. of Agri. and Tech. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-1-5] High-Electron-Mobility Ge n-MOSFET with TiN Metal Gate

T. Yamanaka¹, K. Yamamoto¹, K. Sakamoto¹, H. Yang¹, D. Wang¹, H. Nakashima¹ (1.Kyushu Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-2-1] In depth characterization of electrical effects of dopants (Al, La, Mg, N) in high-k/metal gate stacks

G. Reimbold¹, M. Cassé¹, X. Garros¹, C. Leroux¹, M. Charbonnier¹, L. Brunet^2,1, S. Baudot^2,1, P. Caubet², C. Fenouillet-Béranger^1,2, F. Andrieu¹, O. Weber¹, P. Perreau^1,2, F. Martin¹ (1.CEA-LETI/MINATEC, 2.STMicroelectronics , France)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-2-2] Role of Al atoms in (TaC)_1-xAl_x gate electrode on V_fb for HfO₂ gate stack

M. Kimura¹, T. Nabatame², H. Yamada¹, A. Ohi², T. Chikyow², T. Ohishi¹ (1.Shibaura Inst. of Tech., 2.NIMS , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-2-3] Impurity Profile Extraction of Semiconductor Devices from STM Tunneling Currents by Current Continuity Based Simulation

K. Fukuda¹, M. Nishizawa¹, T. Tada¹, L. Bolotov², K. Suzuki³, S. Sato³, H. Arimoto¹, T. Kanayama¹ (1.AIST, 2.Univ. of Tsukuba, 3.Fujitsu Semiconductor Ltd. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-2-4] Influence of channel area scaling on Weibull distribution of TDDB for poly-Si channel FET

I. Hirano¹, M. Saito¹, T. Numata¹, Y. Mitani¹ (1.Toshiba Corp. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-3-1] Soft X-ray Photoelectron Spectroscopy on Chemical Bonding States of Boron Doped in Si Fin Structures

Y. Miyata¹, J. Kanehara¹, H. Nohira², Y. Izumi³, T. Muro³, T. Kinoshita³, P. Ahmet¹, K. Kakushima¹, K. Tsutsui¹, T. Hattori¹, H. Iwai¹ (1.Tokyo Tech, 2.Tokyo City Univ., 3.JASRI/SPring-8 , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-3-2] Concentration Depth Profiling of Heavily Doped Boron at and near SiO₂/Si Interface by Angle-resolved Soft X-ray Photoelectron Spectroscopy

K. Kakushima¹, J. Kanehara¹, Y. Izumi², T. Muro², T. Kinoshita², P. Ahmet¹, K. Tsutsui¹, T. Hattori¹, H. Iwai¹ (1.Tokyo Tech, 2.JASRI/SPring-8 , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

741 results (161 - 170)

« Prev
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
Next »

▲