[P-3-22L] Random Interface-Traps-Induced Characteristic Fluctuation in 16-nm High-k/Metal Gate CMOS Device and Digital Circuit

Y. Y. Chiu¹, Y. Li¹, H. W. Cheng¹ (1.National Chiao Tung Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-4-1] Pushing Scaling Limit Due to Short Channel Effects and Channel Boosting Leakage from 13nm to 8nm with SOI NAND Flash Memory Cells

K. Miyaji¹, C. Hung¹, K. Takeuchi¹ (1.Univ. of Tokyo , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-4-2] Improved electrical properties of charge trap flash memories having a patterned surface in a Si₃N₄ trap layer

H. M. An¹, J. W. Yang¹, H. D. Kim¹, J. W. Son², W. J. Cho², T. G. Kim¹ (1.Korea Univ., 2.Kwangwoon Univ. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-4-3] Poly Si-TFT Flash Memory with High-k Trapping and Blocking Layer on Glass Substrate for System on Panel

H. W. You¹, W. J. Cho¹ (1.Kwangwoon Univ. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-4-4] Electrical Property of DNA FET -Charge Retention Property-

S. Takagi¹, N. Matsuo¹, K. Yamana¹, A. Heya¹, T. Takada¹, S. Yokoyama² (1.Univ. of Hyogo, 2.Hiroshima Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-4-5] Areal and Structural Effect on Oxide based RRAM cell for Improving Resistive Switching Characteristics

K. C. Ryoo^1,2, J. H. Oh^1,2, S. Jung¹, G. T. Jeong², H. Jeong², B. G. Park¹ (1.Seoul National Univ., 2.Samsung Electronics. Co.,Ltd. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-4-6] Investigation of Switching Behavior of 2-terminal Devices on VO₂

I. P. Radu^1,2, K. Martens¹, B. Govoreanu¹, S. Mertens¹, X. Shi¹, M. Cantoro¹, M. Schaekers¹, M. Jurczak¹, S. De Gendt^1,2, A. Stesmans^1,2, M. Heyns^1,2, J. A. Kittl¹ (1.IMEC, 2.Univ. of Leuven , Belgium)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-4-7] Evaluation of the WO_x Film Properties for ReRAM Application

Y. Y. Chen^1,2, W. C. Chien², M. H. Lee², Y. C. Chen², A. T. H. Chuang², T. J. Hong¹, S. J. Lin¹, T. B. Wu¹, C. Y. Lu² (1.National Tsing Hua Univ., 2.Macronix Int'l Corp., Ltd. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-4-8] Characterization and improved endurance for HfO₂ resistive memory with CMP treated TiN bottom electrode

P. S. Chen¹, Y. S. Chen^2,3, H. Y. Lee², T. Y. Wu², W. H. Liu², P. Y. Gu², F. Chen², M. J. Tsai² (1.MingShin Univ. Sci. and Eng., 2.Industrial Tech. Res. Inst., 3.National Tsing Hua Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-4-9] Study of Bipolar Multilevel Memristive Mechanism and Characterizations in a Thin FeO_x Transition Layer Device

G. Y. Wu¹, Y. F. Chang¹, L. W. Feng¹, C. Y. Chang¹, T. C. Chang² (1.National Chiao Tung Univ., 2.National Sun Yat-Sen Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

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