GaN HEMT with TaO_xN_y Gate Dielectric

T. Sato¹, J. Okayasu¹, T. Yamanouchi¹, T. Yashiro¹, J. Suzuki¹, M. Takikawa¹ (1.Advantest Labs. Ltd. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[A-8-3] Impacts of Dry Etching of GaN and AlGaN Surfaces on Interface Properties of GaN-based MOS Structures

S. Kim¹, Y. Hori¹, N. Azumaishi¹, T. Hashizume^1,2 (1.Hokkaido Univ., 2.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[A-8-4] Damage-free GaN Etching by Chlorine Neutral Beam

Y. Tamura^1,3, X.Y. Wang^1,3, C.H. Huang^1,3, T. Kubota¹, J. Ohta², H. Fujioka^2,3, S. Samukawa^1,3 (1.Tohoku Univ., 2.Univ. of Tokyo, 3.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[A-8-5] Germanium/Ni-InGaAs Solid-State Reaction for Contact Resistance Reduction on n⁺ In_0.53Ga_0.47As

H. X. Guo¹, E. Y. J. Kong¹, X. Zhang¹, Y. C. Yeo¹ (1.National Univ. of Singapore , Singapore)

2011 International Conference on Solid State Devices and Materials |PDF Download

[A-8-6] Fabrication and analysis of AlN/GaAs(001) metal-insulator-semiconductor structure

M. Kudo¹, H. A. Shih¹, M. Akabori¹, T. Suzuki¹ (1.JAIST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[AL-6-1] High-Voltage SiC Power Devices for Energy Electronics

T. Kimoto¹, J. Suda¹ (1.Kyoto Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[AL-6-2] Thermodynamic Control of Interface Layer Formation in High-k Gate Stacks on 4H-SiC

S. Nakatsubo¹, T. Nishimura¹, K. Kita¹, K. Nagashio¹, A. Toriumi¹ (1.Univ. of Tokyo , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[AL-6-3] Characteristics of 4H-SiC p-Channel MOSFETs with Ion-Implanted Buried Channel

M. Okamoto¹, M. Iijima¹, T. Nagano¹, K. Fukuda¹, H. Okumura¹ (1.AIST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[AL-6-4] A Simple Thermal Impedance Measurement of SiC JFETs with Constant Current Operation

T. Kim¹, T. Funaki¹ (1.Osaka Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[AL-6-5] Effects of Substrate Defects on the Gate Leakage Current of AlGaN/GaN Heterojunction FETs Fabricated on Na Flux Bulk GaN

R. Hasegawa¹, N. Yafune¹, H. Tokuda¹, Y. Mori³, H. Amano⁴, M. Kuzuhara¹ (1.Univ. of Fukui, 2.Sharp Corp., 3.Osaka Univ., 4.Nagoya Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

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