[L-3-1] Hetero Junction Engineering for High Efficiency Cu(In,Ga)Se₂ Solar Cells

T. Minemoto¹ (1.Ritsumeikan Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[L-3-2] Cu(In,Al)S₂ thin film solar cells prepared from sulfurization of Cu-In-Al precursors

Y. Oda¹, R. Hamazaki¹, S. Fukamizu¹, A. Yamamoto¹, T. Minemoto¹, H. Takakura¹ (1.Ritsumeikan Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[L-3-3] Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n⁺-BaSi₂/p⁺-Si Tunnel Junction to Undoped BaSi₂ Overlayers

W. Du¹, T. Saito¹, M. A. Khan¹, K. Nakamura¹, M. Baba¹, K. Toh¹, K. Toko¹, N. Usami^2,3, T. Suemasu^1,3 (1.Univ. of Tsukuba, 2.Tohoku Univ., 3.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[L-3-4] Annealing of the BaSi₂ Epitaxial Films Implanted with BF₂ Ions

K. O. Hara^1,4, N. Usami^1,4, Y. Hoshi², Y. Shiraki², M. Suzuno³, K. Toko^3,4, T. Suemasu^3,4 (1.Tohoku Univ., 2.Tokyo City Univ., 3.Univ. of Tsukuba, 4.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[L-8-1] Key Power Device Technologies Catering to Sustainable Growth of Power Electronics

G. Majumdar¹ (1.Mitsubishi Electric Corp. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[L-8-2] Extraction enhanced lateral IGBT (E² LIGBT) : A super high speed LIGBT superior to LDMOS

Y. Ashida¹, S. Takahashi¹, S. Shiraki¹, N. Tokura¹, A. Nakagawa¹ (1.DENSO Corp. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[L-8-3] High Voltage and high reliability SOI power IC technologies and their application to 750V 4.5A micro-inverter IC

S. Shiraki¹, S. Takahashi¹, A. Yamada¹, M. Yamamoto¹, K. Senda¹, Y. Ashida¹, A. Hiruma¹, N. Tokura¹ (1.DENSO Corp. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[L-8-4] A Novel FEM-LDMOS of Improved Off-state Breakdown Voltage Without Additional Mask

H. B. Chen¹, C. J. Chang², J. J. Wu¹, W. C. Chen³, C. C. Tsai², C. Y. Chang¹ (1.National Chiao Tung Univ., 2.Himax Technologies, 3.Vanguard International Semiconductor Corp. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[L-8-5] Reduction of Power Loss of Zero Current Switching Converter by Optimizing Power Devices

S. Machida¹, N. Kikuchi¹, T. Segawa², Y. Shimo², M. Kobayashi² (1.Toyota Central R&D Labs. Inc., 2.Toyota Motor Corp. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[L-8-6] Dynamic-Carrier-Distribution-Based Compact Modeling of P-i-N Diode Reverse Recovery Effect

J. Nakashima¹, M. Miyake¹, M. Miura-Mattausch¹ (1.Hiroshima University , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

741 results (401 - 410)

« Prev
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
Next »

▲