[E-3-3] On the Si Surface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology

R. Kuroda¹, A. Teramoto¹, X. Li¹, T. Suwa¹, S. Sugawa¹, T. Ohmi¹ (1.Tohoku Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-3-4] High Quality and Low Thermal Budget Silicon Nitride Deposition Using PECVD for Gate Spacer, Silicide Block and Contact Etch Stopper

Y. Nakao¹, R. Kuroda¹, H. Tanaka¹, A. Teramoto¹, S. Sugawa¹, T. Ohmi¹ (1.Tohoku Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-4-1] Challenges to Strained Source/Drain and Advanced Silicide for High Performance Transistors

T. Yamaguchi¹ (1.Renesas Electronics Corp. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-4-2] Reduction of NiGe/nGe Schottky Barrier Height by S and P Co-introduction for Metal Source/Drain in Ge nMOSFETs

M. Koike¹, Y. Kamimuta¹, T. Tezuka¹ (1.MIRAI-Toshiba , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-4-3] Improvement of Phosphorus Activation in In-Situ Phosphorus Doped Silicon Epitaxial Film by Cryogenic Silicon Ion-Implantation and Recrystallization Annealing

H. Itokawa¹, S. Teehan², J. Li², P. W. DeHaven³, N. Berliner², J. J. Demarest², N. R. Klymko³, P. Ronsheim³, V. Paruchuri² (1.Toshiba America Electronic Components, Inc., 2.IBM Research at Albany Nanotech Center, 3.IBM Semiconductor Research and Development Center , USA)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-4-4] A Study of Fermi-level Pinning in Ge Schottky and MIS Tunnel Junctions

T. Nishimura^1,2, K. Nagashio^1,2, K. Kita^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo, 2.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-5-1] Formation and Properties of Epitaxial NiGe/Ge(110) Contacts

J. Yokoi¹, O. Nakatsuka¹, S. Zaima¹ (1.Nagoya Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-5-2] Improvement of Thermal stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge MOSFETs

H. S. Shin¹, S. K. Oh¹, M. H. Kang^1,2, H. M. Kwon¹, J. Oh³, P. Majhi³, R. Jammy³, G. W. Lee¹, H. D. Lee¹ (1.Chungnam National Univ., 2.National NanoFab Center , Korea, 3.SEMATECH , USA)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-5-3] Marked Suppression of the Fermi-level Pinning at Atomically Matched Fe₃Si/p-Ge(111) Contacts

K. Kasahara¹, S. Yamada¹, M. Miyao¹, K. Hamaya^1,2 (1.Kyushu Univ., 2.PRESTO-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-6-1] Hybrid-Formation of (100), (110), and (111) Ge-on-Insulator Structures on (100) Si Platform

M. Kurosawa^1,2, T. Sadoh¹, M. Miyao¹ (1.Kyushu Univ., 2.JSPS , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download