[A-5-2] A New Dielectric Isolation Technology Using Molten Silicon Spin Deposition

S. Itoh, S. Tanabe, T. Usui, K. Akahane, E. Fujya, Y. Tahara, Y. Maeda (1.Electronic Devices Group, Oki Electric Industry Co., Ltd., 2.Hoxan Research Laboratories, Hoxan Corporation)

1989 Conference on Solid State Devices and Materials |PDF Download

[A-5-3] Fabrication of Si/CoSi2/Si Permeable Base Transistor Using Self-Aligned and Two Step Molecular Beam Epitaxy

N. Nakamura, T. Ohshima, K. Nakagawa, M. Miyao (1.Central Research Laboratory, Hitachi, Ltd.)

1989 Conference on Solid State Devices and Materials |PDF Download

[A-5-4] Low Leakage SOIMOSFETs Fabricated Using a Wafer Bonding Method

M. Hashimoto, A. Ogasawara, M. Shimanoe, A. Nieda, H. Satoh, A. Yagi, T. Matsushita (1.Research & Development Div., Semiconductor Group Sony Corp)

1989 Conference on Solid State Devices and Materials |PDF Download

[A-6-1] Effect of Trap-State on Field-Effect Mobility of MOSFET's Formed on Large Grain Poly-Si Films

Teruo KATOH, Norio HIRASHITA (1.Oki Electric Industry Co., Ltd, VLSI R&D Laboratory)

1989 Conference on Solid State Devices and Materials |PDF Download

[A-6-2] An 8 nm-thick Polysilicon MOS Transistor and Its Thin Film Effects

T. Hashimoto, T. Kobayashi, T. Mine, T. Yamanaka, N. Hashimoto, A. Shimizu, T. Nishida, Y. Kawamoto (1.Central Research Laboratory, Hitachi Ltd., 2.Hitachi VLSI Engineering Corp.)

1989 Conference on Solid State Devices and Materials |PDF Download

[A-6-3] Three Dimentional Effects on Submicrometer Diagonal MOSFETs

Kazuyoshi TORII, Toru KAGA, Eiji TAKEDA (1.Central Research Laboratory, Hitachi Ltd.)

1989 Conference on Solid State Devices and Materials |PDF Download

[A-6-4] Multilayered Well Formation for Sub-0.5 μm CMOS Devices Utilizing High Energy Ion Implantation

Kiyonori OHYU, Hidekazu GOTHO, Tadashi SUZUKI, Nobuyoshi NATSUAKI (1.Central Research Laboratory, Hitachi, Ltd.)

1989 Conference on Solid State Devices and Materials |PDF Download

[A-7-1] CMOS Compatible Lateral Bipolar Transistor for BiCMOS Technology

N. Akiyama, A. Tamba, Y. Wakui, Y. Kobayashi (1.Hitachi Research Laboratory, Hitachi Ltd.)

1989 Conference on Solid State Devices and Materials |PDF Download

[A-7-2] Physical Model for Deep Submicron Device Simulation

Ken'ichiro SONODA, Yoshitsugu INOUE, Kenji TANIGUCHI, Chihiro HAMAGUCHI (1.Department of Electronics Engineering, Osaka University)

1989 Conference on Solid State Devices and Materials |PDF Download

[A-7-3] Limit on Triode Region Drivability for a 0.1μm MOSFET, Predicted by Process/Device Simulation Including Parasitic Resistance

Itaru Kamohara, Shinichi Takagi, Tetsunori Wada, Kenji Natori (1.ULSI Research Center, Toshiba Corporation)

1989 Conference on Solid State Devices and Materials |PDF Download