[A-5-2] A New Dielectric Isolation Technology Using Molten Silicon Spin Deposition

S. Itoh、S. Tanabe、T. Usui、K. Akahane、E. Fujya、Y. Tahara、Y. Maeda (1.Electronic Devices Group, Oki Electric Industry Co., Ltd.、2.Hoxan Research Laboratories, Hoxan Corporation)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-3] Fabrication of Si/CoSi2/Si Permeable Base Transistor Using Self-Aligned and Two Step Molecular Beam Epitaxy

N. Nakamura、T. Ohshima、K. Nakagawa、M. Miyao (1.Central Research Laboratory, Hitachi, Ltd.)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-4] Low Leakage SOIMOSFETs Fabricated Using a Wafer Bonding Method

M. Hashimoto、A. Ogasawara、M. Shimanoe、A. Nieda、H. Satoh、A. Yagi、T. Matsushita (1.Research & Development Div., Semiconductor Group Sony Corp)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-6-1] Effect of Trap-State on Field-Effect Mobility of MOSFET's Formed on Large Grain Poly-Si Films

Teruo KATOH、Norio HIRASHITA (1.Oki Electric Industry Co., Ltd, VLSI R&D Laboratory)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-6-2] An 8 nm-thick Polysilicon MOS Transistor and Its Thin Film Effects

T. Hashimoto、T. Kobayashi、T. Mine、T. Yamanaka、N. Hashimoto、A. Shimizu、T. Nishida、Y. Kawamoto (1.Central Research Laboratory, Hitachi Ltd.、2.Hitachi VLSI Engineering Corp.)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-6-3] Three Dimentional Effects on Submicrometer Diagonal MOSFETs

Kazuyoshi TORII、Toru KAGA、Eiji TAKEDA (1.Central Research Laboratory, Hitachi Ltd.)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-6-4] Multilayered Well Formation for Sub-0.5 μm CMOS Devices Utilizing High Energy Ion Implantation

Kiyonori OHYU、Hidekazu GOTHO、Tadashi SUZUKI、Nobuyoshi NATSUAKI (1.Central Research Laboratory, Hitachi, Ltd.)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-1] CMOS Compatible Lateral Bipolar Transistor for BiCMOS Technology

N. Akiyama、A. Tamba、Y. Wakui、Y. Kobayashi (1.Hitachi Research Laboratory, Hitachi Ltd.)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-2] Physical Model for Deep Submicron Device Simulation

Ken'ichiro SONODA、Yoshitsugu INOUE、Kenji TANIGUCHI、Chihiro HAMAGUCHI (1.Department of Electronics Engineering, Osaka University)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-3] Limit on Triode Region Drivability for a 0.1μm MOSFET, Predicted by Process/Device Simulation Including Parasitic Resistance

Itaru Kamohara、Shinichi Takagi、Tetsunori Wada、Kenji Natori (1.ULSI Research Center, Toshiba Corporation)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード