[C-9-7] Application of FIB for In-Process Mapping of Failed Capacitors of High-Mega-Bit DRAM

H. Ogawa, K. Tamura, K. Matsuyama, M. Fukumoto, H. Iwasaki (1.Semiconductor Research Center, Matsushita Electric Ind. Co,, Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-10-1] Phosphorus Gettering of Iron in Silicon

Soichi Nadahara, Masaharu Watanabe, Kikuo Yamabe (1.Toshiba ULSI Research Center)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-10-2] Shallow p+-n Junction Formation by As+-Preamorphization and Field-Retarded Diffusion

Sang-Jik Kwon, Hyeong-Joon Kim, Jong-Duk Lee (1.Inter-University Semiconductor Research Center, Seoul National University)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-10-3] Modeling of Mechanism of Leakage in Shallow p+ /n Junction Formed by Pre-amorphization

A. Tanaka, T. Yamaji, S. Nisikawa (1.Semiconductor Tech. Lab., Oki Electric Indusury Co., Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-10-4] The Chemical Bonding Features of Fluorine and Boron in BF2+ Ion Implanted Si

T. Kinoshita, M. Takakura, S. Miyazaki, S. Yokoyama, M. Koyanagi, M. Hirose (1.Department of Electrical Engineering, Hiroshima University, 2.Research Center for Integrated Systems, Hiroshima University)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-10-5] A New Mechanism of Failure in Silicon p+ /n Junction Induced by Diffusion Barrier Metals

Y. Igarashi, T. Yamaji, S. Nishikawa (1.Semiconductor Technology Laboratory, OKI Electric Industry Co., Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-10-6] HRTEM and Nano-Scale Micro Analysis of the Titanium/Silicon Interfacial Reaction Correlated with Electrical Properties

Shin-ichi OGAWA, Takashi KOUZAKI, Takehito YOSHIDA, Robert SINCLAIR (1.Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd., 2.Matsushita Technoresearch, 3.Dept. of Materials Science & Engineering, Stanford Univ.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-10-7] Homogeneous Hetero-Epitaxial NiSi2 Formation on (100)Si

I. Kunishima, K. Suguro, T. Aoyama, J. Matsunaga (1.ULSI Research Center, Toshiba Corporation)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-10-8] Transient RTA of Low-Dose High Energy Phosphorus Implanted Silicon

Istvan BARSONY, Jean-Luc HEIDEMAN, Jan MIDDELHOEK (1.IC-technology and Electronics Group, University of Twente)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-10-9] Characteristics of Junction Leakage Current of Buried Layer Formed by High Energy Ion Implantation

T. Kuroi, S. Komori, H. Miyatake, K. Tsukamoto, Y. Akasaka (1.LSI R&D Lab. Mitsubishi Electric Corp.)

1990 International Conference on Solid State Devices and Materials |PDF Download