Si(001) Interfaces Fabricated with Bi as a Surfactant

Kunihiro SAKAMOTO, Hirofumi MATSUHATA, Ken'ichi KYOYA, Kazushi MIKI, Tsunenori SAKAMOTO (1.Electrotechnical Laboratory)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-I-4-4] Surface Hydrogen Effects on Ge Surface Segregation During Gas Source MBE

N. Ohtani, S. M. Mokler, M. H. Xie, J. Zhang, B. A. Joyce (1.Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College of Science, Technology and Medicine, University of London)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-I-4-5] Mesh Pattern of SPE-Grown Ge Islands on Si(111)

H. Hibino, N. Shimizu, Y. Shinoda (1.NTT Basic Research Laboratories)

1993 International Conference on Solid State Devices and Materials |PDF Download

[C-1-1] Monte Carlo Simulation of Small Silicon Field-Effect Transistors

M. V. Fischetti, S. E. Laux, D. J. Frank (1.IBM Research Division, T. J. Watson Research Center)

1993 International Conference on Solid State Devices and Materials |PDF Download

[C-1-2] Numerical Simulation of Tunnel Effect Transistors Employing Internal Field Emission of Schottky Barrier Junction

Reiji Hattori, Junji Shirafuji (1.Department of Electrical Engineering, Faculty of Engineering, Osaka University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[C-1-3] Device Simulation with Quasi Three-Dimensional Temperature Analysis for Short Channel Poly-Si TFT

Tamio SHIMATANI, Takuji MATSUMOTO, Takeshi HASHIMOTO, Noriji KATO, So YAMADA, Mitsumasa KOYANAGI (1.Research Center for Integrated Systems, Hiroshima University, 2.Fuji Xerox Co.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[C-1-4] Simulation of Tunneling Current due to Enhanced Electric Fields at the Edge of Gate Electrode

Hirotaka Muto, Hiroyoshi Kitabayashi, Koichiro Nakanishi Setsuo Wake, Moriyoshi Nakajima (1.Manufacturing Development Lab., 2.Kita-Itami Works Mitsubishi Electric Corp.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[C-1-5] Direct Observation of Channel-Doping-Dependent Reverse Short Channel Effect Using Decoupled C-V Technique

C. C. -H. Hsu, J. C. Guo, M. H. Kuo (1.Department of Electrical Engineering, National Tsing-Hua University, 2.Department of Electronics Engineering, National Chiao-Tung University, 3.Electronics Research & Service Organization Industrial Technology Research Institute)

1993 International Conference on Solid State Devices and Materials |PDF Download

[C-2-1] SOI Layer Thickness and Buried Oxide Thickness Dependencies of High Voltage Lateral IGBT Switching Characteristics

Norio Yasuhara, Tomoko Matsudai, Akio Nakagawa (1.Research and Development Center, Toshiba Corporation)

1993 International Conference on Solid State Devices and Materials |PDF Download

[C-2-2] Stress-Induced Quasi-Hetero-Emitter Band Structure for a Phosphorus-Doped Poly-Si Emitter Bipolar Transistor

Masao Kondo, Takashi Kobayashi, Yoichi Tamaki (1.Central Research Laboratory, Hitachi, Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF Download