[E-3-2] AN EXTENDED "Y FUNCTION" METHOD FOR SATURATION REGIME CHARACTERIZATION: APPLICATION TO BULK Si AND Ge TECHNOLOGIES

C. Diouf^1,2、A. Cros¹、S. Monfray¹、J. Mitard³、J. Rosa¹、D. Gloria¹、G. Ghibaudo² (1.Indus STMicroelectronics、2.IMEP lab , FRANCE、3.IMEC lab , BELGIUM)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-3-3] Effects of interfacial layer between high-k gate dielectric and InGaAs surface on its inversion layer electron mobility

M. Oda¹、T. Irisawa¹、Y. Kamimuta¹、O. Ichikawa²、T. Tezuka¹ (1.AIST、2.Sumitomo Chemical Co. Ltd. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-4-1] A Physics-Based Compact Model of Tunnel-FETs Considering Nonlocal Effects

K. Fukuda¹、T. Mori¹、W. Mizubayashi¹、Y. Morita¹、A. Tanabe¹、M. Masahara¹、T. Yasuda¹、S. Migita¹、H. Ota¹ (1.GNC, AIST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-4-2] Tunnel Field Effect Transistor with Epitaxially Grown Steep Tunnel Junction Fabricated by Source/Drain-first and Tunnel-junction-last Processes

Y. Morita¹、T. Mori¹、S. Migita¹、W. Mizubayashi¹、A. Tanabe¹、K. Fukuda¹、M. Masahara¹、H. Ota¹ (1.GNC-AIST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-4-3] First Demonstration of Tunnel Field-Effect Transistor Using InGaAs/Si Junction

K. Tomioka^1,2、M. Yoshimura¹、T. Fukui¹ (1.Hokkaido Univ.、2.JST-PRESTO , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-4-4] Sub-10-nm nano-sheet channel of Junctionless Poly-Si TFT with oxidation thinning method

Y. C. Cheng¹、H. B. Chen²、J. J. Wu²、M. H. Han²、Y. C. Wu¹、C. Y. Chang² (1.Univ. of National Tsing Hua、2.Univ. of National Chiao Tung , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-5-1] Experimental Observation of Record-high Electron Mobility of Greater than 1100 cm2V-1s-1 in Unstressed Si MOSFETs and Its Physical Mechanisms

T. Ohashi¹、T. Takahashi¹、T. Kodera²、S. Oda²、K. Uchida³ (1.Dept. of Phys. Elec., Tokyo Tech.、2.QNERC, Tokyo Tech.、3.Dept. of Elect. Eng., Keio Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-5-2] On the understanding of mobility degradation mechanisms in advanced CMOS devices: FDSOI versus bulk Tech.

I. Ben Akkez^1,3、C. Diouf^1,3、A. Cros¹、C. Fenouillet Beranger^1,2、P. Perreau^1,2、F. Balestra³、G. Ghibaudo³、F. Boeuf¹ (1.STmicroelectronics、2.CEA-LETI、3.IMEP/LAHC , France)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-5-3] Si1-yGey or Ge1-zSnz Source/Drain Stressors on Strained Si1-xGex-Channel PFETS: A TCAD Study

G. Eneman¹、A. De Keersgieter¹、L. Witters¹、J. Mitard¹、B. Vincent¹、A. Hikavyy¹、R. Loo¹、N. Horiguchi¹、N. Collaert¹、A. Thean¹ (1.IMEC , Belgium)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-5-4] Impacts of Surface Roughness Reduction in (110) Si Substrates by High Temperature Annealing on Electron Mobility in n-MOSFETs on (110) Si

S. H. Jeon¹、N. Taoka^1,2、H. Matsumoto³、K. Nakano³、S. Koyama³、H. Kakibayasi³、K. Araki⁴、M. Miyashita⁴、K. Izunome⁴、M. Takenaka¹、S. Takagi¹ (1.Univ. of Tokyo、2.Nagoya Univ.、3.Hitachi High-technologies Corp.、4.Covalent Silicon Corp. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード