[J-2-4] Impact of PdO Gate Interlayer on the DC Performance of GaN/AlGaN High Electron Mobility Transistor

F.C Chu¹, A. Das¹, R.M Lin¹, H.W Chuang², K.J Chang², Y.T Gau² (1.Chang Gung Univ., 2.Chung Shan Inst. of Sci. and Tech. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[J-2-5] Demonstration of Enhancement-mode Operation in AlGaN/GaN MOS-HEMT on Si by utilizing ALD Al₂O₃ layer

J.J. Freedsman¹, T. Kubo¹, T. Egawa¹ (1.Nagoya Inst. of Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[J-2-6] A Low Turn-On Voltage and High Breakdown Voltage AlGaN/GaN Dual Metal Schottky Barrier Diode

T.Y. Yang^1,2, T.F. Chang¹, T.Y. Huang², C.W. Chiu², H.D. Su², K.C. Chang², C.F. Huang¹ (1.National Tsing Hua Univ., 2.Richtek Tech. Corp. (Taiwan))

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[J-3-1] Scaling to 100nm Channel Length of Crystalline In-Ga-Zn-Oxide Thin Film Transistors with Extremely Low Off-State Current

Y. Kobayashi¹, S. Matsuda¹, D. Matsubayashi¹, H. Suzawa¹, M. Sakakura¹, K. Hanaoka¹, Y. Okazaki¹, T. Yamamoto¹, S. Hondo¹, T. Hamada¹, S. Sasagawa¹, M. Nagai¹, Y. Hata¹, T. Maruyama¹, Y. Yamamoto¹, S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd. (Japan))

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[J-3-2] Gate Oxide Thickness Dependence of Intrinsic Gain and Flicker Noise in InGaZnO Thin Film Transistors

T. Morooka¹, K. Fukase¹, S. Nakano², S. Toriyama², H. Momose¹, T. Ohguro¹ (1.Toshiba Corp. Semiconductor & Strorage Products Company, 2.Toshiba Corp. (Japan))

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[J-3-3] Fabrication and Characterization of High-Performance ZnO Thin-Film Transistors

R.J. Lyu¹, H.C. Lin^1,2, T.Y. Huang¹ (1.National Chiao Tung Univ., 2.National Nano Device Labs. (Taiwan))

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[J-3-4] Suppression of Threshold Voltage Variation Due to Conduction Band Lowering Effect in Crystalline In-Ga-Zn-Oxide Thin Film Transistors

D. Matsubayashi¹, Y. Kobayashi¹, S. Matsuda¹, T. Obonai², N. Ishihara¹, S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd., 2.Advanced Film Device Inc. (Japan))

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[J-3-5L] InGaSb/AlSb high hole mobility FETs on Si Substrate

H.W. Huang¹, P.C. Chiu¹, H.C. Ho¹, Y.M. Hsin¹, J.I. Chyi¹ (1.National Central Univ. (Taiwan))

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[J-4-1] Progress in SiC and GaN High Voltage Power Devices

T.P. Chow¹ (1.Rensselaer Poly. Inst. (USA))

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[J-4-2] Effects of p-GaN Capping Layer on the Current Collapse Behaviors in Normally-off p-GaN Gate AlGaN/GaN HFETs

M.K. Eo¹, H.S. Choi¹, S.Y. Jang², W.S. Kim², J.H. Shin², T.H. Jang², H.I. Kwon¹ (1.Univ. of Chung-Ang, 2.System IC R&D Lab., LG Electronics (Korea))

2013 International Conference on Solid State Devices and Materials |PDF Download