[M-3-04] SiC Nano-Dots in Bulk-Si SubstrateFabricated by Hot-C⁺-Ion Implantation Technique

^○T. Mizuno¹, S. Nakada¹, M. Yamamoto¹, S. Irie¹, Y. Omata¹, T. Aoki¹, T. Sameshima² (1.Kanagawa Univ. (Japan), 2.Tokyo Univ. of Agri. & Tech. (Japan))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 10:30 〜 10:45 |PDF ダウンロード

[M-3-05] Sb-doping effect on thermal and electrical properties of Ge-rich Ge_1-_xSn_x layers

^○T. Iwahashi¹, M. Kurosawa^1,2,3, N. Uchida⁴, Y. Ohishi⁵, T. Maeda⁴, O. Nakatsuka^1,6, S. Zaima⁶ (1.Grad. Sch. of Eng., Nagoya Univ. (Japan), 2.IAR, Nagoya Univ. (Japan), 3.PRESTO-JST (Japan), 4.NERI-AIST (Japan), 5.Grad. Sch. of Eng., Osaka Univ. (Japan), 6.IMaSS, Nagoya Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 10:45 〜 11:00 |PDF ダウンロード

[M-4-01] High Substitutional-Sn-Concentration GeSn-on-Insulator by Weak-Laser-Irradiation-Enhanced Solid-Phase Crystallization at Low-Temperature (~170°C)

^○T. Sugino¹, K. Moto¹, R. Matsumura¹, H. Ikenoue¹, M. Miyao¹, T. Sadoh¹ (1.Kyushu Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 14:00 〜 14:15 |PDF ダウンロード

[M-4-02] Dopants behavior in polycrystallization of heavily doped Ge_1-xSn_x layer using pulsed laser annealing in water

^○K. Takahashi^1,2, M. Kurosawa^1,3, H. Ikenoue⁴, M. Sakashita¹, O. Nakatsuka¹, S. Zaima¹ (1.Nagoya Univ. (Japan), 2.JSPS Res. Fellow (Japan), 3.PRESTO-JST (Japan), 4.Kyushu Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 14:15 〜 14:30 |PDF ダウンロード

[M-4-03] Grain Boundary Engineering of Solid-Phase Crystallized Ge on Glass by Controlling Atomic Density of Precursor

^○R. Yoshimine¹, K. Toko¹, T. Suemasu¹ (1.Univ. of Tsukuba (Japan))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 14:30 〜 14:45 |PDF ダウンロード

[M-4-04] Effects of Deposition Temperature of Amorphous Precursors on Solid-Phase Crystallized Si₁₋_xGe_xThin Films on an Insulator

^○D. Takahara¹, K. Toko¹, R. Yoshimine¹, T. Suemasu¹ (1.Univ. of Tsukuba (Japan))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 14:45 〜 15:00 |PDF ダウンロード

[M-4-05] Deposition mechanism of thin Si and Ge films promoted by liquid-phase reduction under ballistic hot electron incidence

^○R. Suda¹, A. Kojima¹, N. Mori², J. Shirakashi¹, N. Koshida¹ (1.Tokyo Univ. of Agri. & Tech. (Japan), 2.Osaka Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 15:00 〜 15:15 |PDF ダウンロード

[M-5-01 (Invited)] Nanospectroscopic investigation of individual free-standing semiconductor nanowires using nanoprobe-cathodoluminescence techniques

^○K. Watanabe^1,2 (1.Osaka Univ. (Japan), 2.NIMS (Japan))

2017 International Conference on Solid State Devices and Materials |2017年9月22日(金) 09:30 〜 10:00 |PDF ダウンロード

[M-5-02] Improved optical properties of low density InAs/GaAs quantum dots by controlling partial capping process

^○M. Kakuda¹, Y. Ota¹, K. Kuruma¹, K. Watanabe¹, S. Iwamoto¹, Y. Arakawa¹ (1.Univ. of Tokyo (Japan))

2017 International Conference on Solid State Devices and Materials |2017年9月22日(金) 10:00 〜 10:15 |PDF ダウンロード

[M-5-03] MOCVD Selective Growth of InAs Nanowires on Patterned Silicon Substrate by Optimizing Gas Flow Rate and Annealing Temperature

^○D. Anandan¹, H. W. Yu¹, H. L. Ko¹, R. K. Kakkerla¹, V. Nagarajan¹, S. K. Singh¹, E. Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials |2017年9月22日(金) 10:15 〜 10:30 |PDF ダウンロード