[H-7-04] Size Modulated Nitrogen-Doped Graphene Oxide Quantum Dots for Diffusive Memristor based Synaptic Device Applications

^○A. Sergeevich Sokolov¹, Y.-R. Jeon¹, H. Han¹, B. Ku¹, G. Hassan¹, H. Abbas¹, C. Choi¹ (1.Hanyang Univ. (Korea))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 14:15 〜 14:30 |PDF ダウンロード

[J-1-01 (Invited)] Electromigration scaling limits of copper interconnects

^○O.V. Pedreira¹, H. Zahedmanesh¹, I. Ciofi¹, Z. TÖkei¹, K. Croes¹ (1.imec (Belgium))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 14:00 〜 14:30 |PDF ダウンロード

[J-1-02 (Invited)] Opportunities and Challenges of Atom Switch for Next AI Hardware

^○M. Tada¹, T. Sakamoto¹, M. Miyamura¹ (1.NEC Corp. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 14:30 〜 15:00 |PDF ダウンロード

[J-1-03] Characterization of Electroplated Cu Films by Combination of PALS, HIM, and EBSD

^○Y. Hara¹, M. Kodera¹, E. Webb¹, J. Sukamto¹, T. Ohdaira², S. Ogawa² (1.Moses Lake Indus. (USA), 2.AIST (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 15:00 〜 15:15 |PDF ダウンロード

[J-1-04] Barometric Pressure Sensor with Air Pockets fabricated by CMOS Process Technology

^○D. Jang¹, Y. Hong¹, S. Hong¹, Y. Jeong¹, G. Jung¹, J.-H. Lee¹ (1.Seoul National Univ. (Korea))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 15:15 〜 15:30 |PDF ダウンロード

[J-1-05 (Late News)] Copper-Ruthenium System Study for Advanced Hybrid BEOL-Interconnects Applications

^○N. Jourdan¹, M. Korytov¹, S. Van Elshocht¹, Z. TÖkei¹ (1.imec (Belgium))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 15:30 〜 15:45 |PDF ダウンロード

[J-2-01 (Invited)] Size-Reduction of HBW System using WOW Bumpless TSV Interconnects

^○T. Ohba¹ (1.Tokyo Tech (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 15:45 〜 16:15 |PDF ダウンロード

[J-2-02 (Late News)] Impact of Seed Layers on TSV Filling by Electrochemical Deposition

^○Y. Hara¹, E. Webb¹, J. Sukamto¹, M. Mariappan², T. Fukushima², M. Kodera³ (1.Moses Lake Indus.-Advanced Res. Center (USA), 2.GINTI, NICHe, Tohoku Univ. (Japan), 3.Moses Lake Indus. Inc. (USA))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 16:15 〜 16:30 |PDF ダウンロード

[J-2-03 (Late News)] High Aspect Ratio TSV Formation by Using Low-Cost, Electroless-Ni as Barrier and Seed Layers for 3D-LSI Integration and Packaging Applications

^○M. Mariappan¹, K. Mori¹, A. Nakamura¹, H. Hashimoto¹, J.C. Bea¹, T. Fukushima¹, M. Koyanagi¹ (1.Tohoku Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 16:30 〜 16:45 |PDF ダウンロード

[J-5-01 (Invited)] Wafer to Wafer Stacking and Hybrid Bonding for Heterogeneous Integration

^○K. Takahashi¹ (1.AIST (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 09:00 〜 09:30 |PDF ダウンロード