Oral presentation

[14p-4E-1~21] 7.6 Ion beams

Mon. Sep 14, 2015 12:30 PM - 6:15 PM 4E (437)

座長:阿保智(阪大),瀬木利夫(京大),柳沢淳一(滋賀県立大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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12:30 PM - 12:45 PM

△ [14p-4E-1] c-axis parallel polarity inverted multilayer film by grazing ion beam deposition

〇Takeshi Mori¹, Masashi Suzuki², Takahiko Yanagitani² (1.Nagoya Inst. Tech., 2.Waseda Univ.)

12:45 PM - 1:00 PM

[14p-4E-2] Substrate Temperature Dependence of C-N Thin Firm Deposited by Ionic Liquid Ion Beam

〇Yuki Hoshide¹, Mitsuaki Takeuchi¹, Ryuto Hiromichi¹, Gikan Takaoka¹ (1.Kyoto Univ)

1:00 PM - 1:15 PM

[14p-4E-3] Low temperature deposition of graphene-like thin films with C₂H₆-GCIB irradiation

〇daichi nakayama¹, noriaki toyoda¹, isao yamada¹, hiromasa baba¹ (1.Univ. of Hyogo)

1:15 PM - 1:30 PM

[14p-4E-4] Effect of UV light irradiation on organic materials during gas cluster ion beam etching

〇Ryo Hinoura¹, Noriaki Toyoda¹, Isao Yamada¹ (1.Univ. of Hyogo)

1:30 PM - 1:45 PM

[14p-4E-5] Surface modification of PEEK by gas cluster ion beam irradiation

〇Yuuki Uozumi¹, Noriaki Toyoda¹, Isao Yamada¹ (1.Grad. school of eng. Univ of Hyogo.)

1:45 PM - 2:00 PM

[14p-4E-6] Oblique etching with ClF₃ neutral cluster beam

〇Toshio Seki¹, Hiroki Yamamoto², Takahiro Kozawa², Yu Yoshino³, Takehiko Senoo³, Kunihiko Koike³, Takaaki Aoki¹, Jiro Matsuo¹ (1.Kyoto Univ., 2.ISIR Osaka Univ., 3.Iwatani Corp.)

2:00 PM - 2:15 PM

[14p-4E-7] Effect of low-energy Ga ion irradiation on silicon and silicon nitride surfaces

〇Masashi Yamada¹, Yuto Matsui¹, Itsunari Yamada¹, Junichi Yanagisawa¹ (1.Univ. of Shiga Prefecture)

Break （2:15 PM - 2:30 PM）

2:30 PM - 2:45 PM

△ [14p-4E-8] How Platinum Nanoparticle Catalysts are Affected by Ion-Beam Modification of their Support

〇(M2)Tetsuya KIMATA¹, Sho KATO¹, Tetsuya YAMAKI², Shunya YAMAMOTO², Teruyuki HAKODA², Tomohiro KOBAYASHI³, Takayuki TERAI¹ (1.UTokyo, 2.JAEA, 3.RIKEN)

2:45 PM - 3:00 PM

[14p-4E-9] Optical properties and Ion-implanted dose monitor by Ion-implanted Quartz

〇Shuhei Tanaka¹, Yoshiko Ueno¹, Sumie Toshida¹, Koji Matsuda², Tsutomu Nagayaama², Yutaka Inouchi² (1.NGF Tsukuba-Lab., 2.Nissin Ion Equip.)

3:00 PM - 3:15 PM

[14p-4E-10] Development and simple evaluation of glass dosimeter for convenient three dimensional radiation dosimetry

〇yoshinori matsubara¹, Shunsuke Kawabata^1,2, Raj Kumar Parajuli¹, Wataru Kada¹, Masato Sakai¹, Kenta Miura¹, Takahiro Satoh², Masashi Koka², Naoto Yamada², Tomihiro Kamiya², Osamu Hanaizumi¹ (1.Gunma Univ., 2.JAEA)

3:15 PM - 3:30 PM

[14p-4E-11] Evaluation of phosphate glass dosimeter by ion-microbeam-induced luminescence analysis

〇Shunsuke Kawabata^1,2, Wataru Kada¹, Yoshinori Matsubara¹, Kenta Miura¹, Takahiro Satoh², Masashi Koka², Naoto Yamada², Tomihiro Kamiya², Osamu Hanaizumi¹ (1.Gunma Univ., 2.JAEA)

3:30 PM - 3:45 PM

[14p-4E-12] Continuous measurement of IL spectroscopy from organic targets with external proton microbeam probe

〇Wataru Kada¹, Takahiro Satoh², Shunsuke Kawabata^1,2, Masashi Koka², Naoto Yamada², Akihito Yokoyama^1,2, Tomihiro Kamiya², Kenta Miura¹, Osamu Hanaizumi¹ (1.Gunma Univ., 2.JAEA)

3:45 PM - 4:00 PM

[14p-4E-13] Highly sensitive hydrogen detection for metal surfaces
by medium energy Ne⁺ impact

〇(PC)Kei Mitsuhara¹, Yasukazu Yamamoto¹, Yoshiaki Kido² (1.Ritsumeikan Univ. SR, 2.Ritsumeikan Univ.)

4:00 PM - 4:15 PM

[14p-4E-14] Time Resolution of Single-Event Three Dimensional TOF-RBS (III)

〇Satoshi Abo¹, Yasuhisa Hamada¹, Albert Seidl^1,2, Fujio Wakaya¹, Masayuki Abe¹, Mikio Takai¹ (1.Osaka Univ., 2.Magdeburg-Stendal Univ. of Appl. Sci)

Break （4:15 PM - 4:30 PM）

4:30 PM - 4:45 PM

[14p-4E-15] Influence of nano-protrusion of gas field ion emitter on He-ion current

〇Shigekazu Nagai¹, Shu Katoh¹, Tatsuo Iwata¹, Kazuo Kajiwara¹, Koichi Hata¹ (1.Mie Univ.)

4:45 PM - 5:00 PM

△ [14p-4E-16] Development of Time-of-flight mass spectrometer for light element ions produced by field evaporation

〇Yuki Haneji¹, Tasuku Sone¹, Hiroshi Tsuji¹, Yasuhito Gotoh¹ (1.Kyoto Univ.)

5:00 PM - 5:15 PM

[14p-4E-17] Detection of multiply charged ions by using TOF-MS and charge-changing analysis

〇Hiroshi Tsuji¹, Yu Tsudome¹, Yasuhito Gotoh¹ (1.Kyoto Univ.)

5:15 PM - 5:30 PM

[14p-4E-18] Fundamental Study for Cluster SIMS Analysis under Low Pressure

〇Kanji Suzuki¹, Masakazu Kusakari¹, Makiko Fujii¹, Toshio Seki¹, Takaaki Aoki¹, Jiro Matsuo¹ (1.Kyoto Univ.)

5:30 PM - 5:45 PM

[14p-4E-19] Observation of Si/Al interface in a hot environment using TOF-SIMS

〇Norimichi Watanabe¹, Hiroaki Mamiya¹, Fujio Abe², Masataka Ohkubo³, Hideaki Kitazawa¹ (1.NIMS Quantum Beam, 2.NIMS Materials Reliability, 3.AIST Electronics and Manufacturing)

5:45 PM - 6:00 PM

[14p-4E-20] Temperature-programmed TOF-SIMS on quench-condensed solid surfaces

〇Taku Suzuki¹, Isao Sakaguchi¹ (1.NIMS)

6:00 PM - 6:15 PM

[14p-4E-21] Development of Rapid Cooling System for TOF-SIMS Apparatus and Analysis of Aerosol Particles with Maintaining Volatile Component

〇Masato Morita¹, Keita Kanenari¹, Kenji Ohishi¹, Tetsuo Sakamoto¹ (1.Kogakuin Univ.)

Poster presentation

[14p-PB11-1~6] 7.6 Ion beams

Mon. Sep 14, 2015 6:30 PM - 8:30 PM PB11 (Shirotori Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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6:30 PM - 8:30 PM

[14p-PB11-1] Evaluation of dopant ion distribution implanted through nanohole mask using 3D atom probe
- Enhancing the aiming precision of single-ion implantation-

〇(M1)Maasa YANO¹, Yuki CHIBA¹, Yasuo SHIMIZU², Koji INOUE², Yasuyoshi NAGAI², Takashi TANII¹, Takahiro SHINADA³ (1.Waseda Univ., 2.IMR Tohoku Univ., 3.CIES Tohoku Univ.)

6:30 PM - 8:30 PM

[14p-PB11-2] XPS analysis on damage of Si surface induced by argon gas cluster ion beam irradiation(3)

〇Ako Miisho¹, Shin Takahashi¹, Naoki Hiyoshi¹, Masayuki Inaba¹, Shugo Miyake¹ (1.Kobelco Research Institute, Inc.)

6:30 PM - 8:30 PM

[14p-PB11-3] Secondary Electron Imaging of Multilayer Ceramic Capacitors with applied voltage using Scanning Helium Ion Microscope

〇Chikako Sakai¹, Nobuyuki Ishida¹, Hideki Masuda¹, Yoichiro Ogata², Daisuke Fujita¹ (1.NIMS, 2.TAIYO YUDEN)

6:30 PM - 8:30 PM

▲ [14p-PB11-4] Morphological control of 1D copper nanostructure grown at room temperature and their field emission properties

〇(D)Mohamad Rosmi^1,2, Yazid Yaakob^1,3, Subash Sharma¹, Mohd Zamri Mohd Yusop⁴, Golap Kalita¹, Masaki Tanemura¹ (1.Nagoya Inst. of Tech., 2.Univ. Pend. Sultan Idris, 3.Univ. Putra Malaysia, 4.Univ. Tech. Malaysia)

6:30 PM - 8:30 PM

[14p-PB11-5] Metallic particle formation by ion beam irradiation in liquid

〇(M2)Yota Matsubayashi¹, Tomohiro Kobayashi², Takayuki Terai¹ (1.Univ. of Tokyo, 2.RIKEN)

6:30 PM - 8:30 PM

[14p-PB11-6] Growth of c-axis tilted ScAlN films by oblique angle sputtering deposition

〇(PC)Masashi Suzuki¹, Takahiko Yanagitani¹ (1.Waseda Univ.)

Sessions

7 Beam Technology and Nanofabrication » 7.6 Ion beams

[14p-4E-1~21] 7.6 Ion beams

△ [14p-4E-1] c-axis parallel polarity inverted multilayer film by grazing ion beam deposition

[14p-4E-2] Substrate Temperature Dependence of C-N Thin Firm Deposited by Ionic Liquid Ion Beam

[14p-4E-3] Low temperature deposition of graphene-like thin films with C₂H₆-GCIB irradiation

[14p-4E-4] Effect of UV light irradiation on organic materials during gas cluster ion beam etching

[14p-4E-5] Surface modification of PEEK by gas cluster ion beam irradiation

[14p-4E-6] Oblique etching with ClF₃ neutral cluster beam

[14p-4E-7] Effect of low-energy Ga ion irradiation on silicon and silicon nitride surfaces

△ [14p-4E-8] How Platinum Nanoparticle Catalysts are Affected by Ion-Beam Modification of their Support

[14p-4E-9] Optical properties and Ion-implanted dose monitor by Ion-implanted Quartz

[14p-4E-10] Development and simple evaluation of glass dosimeter for convenient three dimensional radiation dosimetry

[14p-4E-11] Evaluation of phosphate glass dosimeter by ion-microbeam-induced luminescence analysis

[14p-4E-12] Continuous measurement of IL spectroscopy from organic targets with external proton microbeam probe

[14p-4E-13] Highly sensitive hydrogen detection for metal surfaces
by medium energy Ne⁺ impact

[14p-4E-14] Time Resolution of Single-Event Three Dimensional TOF-RBS (III)

[14p-4E-15] Influence of nano-protrusion of gas field ion emitter on He-ion current

△ [14p-4E-16] Development of Time-of-flight mass spectrometer for light element ions produced by field evaporation

[14p-4E-17] Detection of multiply charged ions by using TOF-MS and charge-changing analysis

[14p-4E-18] Fundamental Study for Cluster SIMS Analysis under Low Pressure

[14p-4E-19] Observation of Si/Al interface in a hot environment using TOF-SIMS

[14p-4E-20] Temperature-programmed TOF-SIMS on quench-condensed solid surfaces

[14p-4E-21] Development of Rapid Cooling System for TOF-SIMS Apparatus and Analysis of Aerosol Particles with Maintaining Volatile Component

[14p-PB11-1~6] 7.6 Ion beams

[14p-PB11-1] Evaluation of dopant ion distribution implanted through nanohole mask using 3D atom probe
- Enhancing the aiming precision of single-ion implantation-

[14p-PB11-2] XPS analysis on damage of Si surface induced by argon gas cluster ion beam irradiation(3)

[14p-PB11-3] Secondary Electron Imaging of Multilayer Ceramic Capacitors with applied voltage using Scanning Helium Ion Microscope

▲ [14p-PB11-4] Morphological control of 1D copper nanostructure grown at room temperature and their field emission properties

[14p-PB11-5] Metallic particle formation by ion beam irradiation in liquid

[14p-PB11-6] Growth of c-axis tilted ScAlN films by oblique angle sputtering deposition

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