〇(M1)Keisuke Kondo^1,2, Wataru Nishimura^1,2, Motohiro Suzuki³, Nobuhiro Yasuda³, Yoshimitsu Fukuyama³, Yuya Kubota^2,3, Tadashi Togashi^2,3, Takayuki Hasegawa¹, Yoshihito Tanaka^1,2 (1.Univ. of Hyogo, 2.RIKEN/SPring-8, 3.JASRI)

Oral presentation

[20a-E204-1~8] 3.13 Semiconductor optical devices

Fri. Sep 20, 2019 9:00 AM - 11:15 AM E204 (E204)

Takeo Maruyama(Kanazawa Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[20a-E204-1] Improved Specific Detectivity of a QDIP by diffractive reflector structure

〇Yuichi Igarashi^1,2, Taizo Shibuya^1,2, Masahiro Kakuda², Yoshihiro Kitagawa^1,2, Tetsuro Satoh^1,2, Akinobu Shibuya^1,2, Masayuki Shirane^1,2, Yasuhiko Arakawa² (1.NEC Corporation, 2.NanoQuine)

9:15 AM - 9:30 AM

[20a-E204-2] Control of optical absorption due to intersubband by using PN junction

〇Shinichirou Gozu¹ (1.AIST)

9:30 AM - 9:45 AM

▲ [20a-E204-3] Reducing Dark Current Mechanisms for Barrier Infrared Photodetector Using Type II InAs/GaSb Superlattices

〇(DC)Yen Thi Le¹, Kamakura Yoshinari², Mori Nobuya¹ (1.Osaka Univ., 2.OIT Inst.)

9:45 AM - 10:00 AM

△ [20a-E204-4] [Highlight] FSI NIR InGaAs PhotoFETs Using Layer Transfer Technology

〇(B)Kazuaki Oishi^1,2, Hiroyuki Ishii², Wen Hsin Chang², Tetsuji Shimizu², Hiroto Ishii^1,2, Akira Endoh¹, Hiroki Fujishiro¹, Tatsuro Maeda^1,2 (1.TUS, 2.AIST)

10:15 AM - 10:30 AM

[20a-E204-5] Influence of Positions of Corrugated Regions in Ridge LDs with Transversal Gratings

〇Koki Taniguchi¹, Takahiro Numai¹ (1.Ritsumeikan Univ.)

10:30 AM - 10:45 AM

[20a-E204-6] Effect of Coupling Coefficient and Shapes of Gratings on Laser Characteristics in Resonance Shifted DFB-LD

〇Ichitaro Niko¹, Takahiro Numai¹ (1.Ritsumeikan Univ.)

10:45 AM - 11:00 AM

[20a-E204-7] Enhancement of Front/Rear Facet Light Output Ratio in Resonance-Shifted DFB-LD with Phase Shift at Region Interface

〇Cheng Yan¹, Numai Takahiro¹ (1.Ritsumeikan Univ.)

11:00 AM - 11:15 AM

[20a-E204-8] Enhancement of Front/Rear Facet Light Output Ratio in Resonance-Shifted DFB-LD with Different Coupling Coefficient Regions

〇Daiki Yoshimura¹, Takahiro Numai¹ (1.Ritsumeikan Univ.)

Oral presentation

[20p-E204-1~11] 3.13 Semiconductor optical devices

Fri. Sep 20, 2019 1:45 PM - 5:00 PM E204 (E204)

Takahiro Numai(Ritsumeikan Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[20p-E204-1] Fabrication of regionally band-gap tailored 1550nm-band InAs quantum dot intermixed laser

〇(M2)Syohei Isawa¹, Ryosuke Morita¹, Kaneko Runa¹, Okada Hirokazu¹, Matsumoto Atsushi², Akahane Kouichi², Matsushima Yuichi¹, Ishikawa Hiroshi¹, Utaka Katsuyuki¹ (1.Waseda Univ., 2.NICT)

2:00 PM - 2:15 PM

[20p-E204-2] Design and Fabrication of GaAs-based Bi-section Laser Diodes Grown by Molecular Beam Epitaxy

〇Yusuke Ishikawa¹, Ryota Arakawa¹, Daisuke Kambayashi¹, Shigeya Naritsuka¹, Daichi Imai¹, Takao Miyajima¹ (1.Meijo Univ.)

2:15 PM - 2:30 PM

[20p-E204-3] Gain enhancement of quantum cascade lasers by simulation with nonequilibrium Green's function

〇Hirotaka Tanimura¹, Shigeyuki Takagi¹, Tsutomu Kakuno², Rei Hashimoto², Kei Kaneko², Shinji Saito² (1.Tokyo Univ. of Tech., 2.Toshiba)

2:30 PM - 2:45 PM

△ [20p-E204-4] Design of 3D controlled resistance and absorption for high-efficiency VCSEL by proton implantation

〇Hayato Sakamoto¹, Tomoyuki Miyamoto¹ (1.FIRST, Tokyo Tech)

3:00 PM - 3:15 PM

[20p-E204-5] Characterization of 1.1-µm-centered tunable laser based on InAs quantum dots for swept-source OCT light source applications

〇Nobuhiko Ozaki¹, David Childs², Aleksandr Boldin², Hirotaka Ohsato³, Eiichiro Watanabe³, Naoki Ikeda³, Yoshimasa Sugimoto³, Richard Hogg² (1.Wakayama Univ., 2.Univ. Glasgow, 3.NIMS)

3:15 PM - 3:30 PM

[20p-E204-6] Lateral coupling integration of VCSEL and beam scanner with controlled cutoffwavelength
structure

〇Masashi Takanohashi¹, Keisuke Shimura¹, Xiaodong Gu¹, Masanori Nakahama¹, Akihiro Matsutani², Takahiro Sakaguchi¹, Fumio Koyama¹ (1.Tokyo Tech. FIRST, 2.Tokyo Tech. TechDept)

3:30 PM - 3:45 PM

[20p-E204-7] Integrated devices of MEM VCSEL and VCSEL beam deflector

〇Hiroki Ota¹, Xiaodong Gu¹, Takahiro Sakaguchi¹, Fumio Koyama¹ (1.Tokyo Tech. FIRST)

4:00 PM - 4:15 PM

[20p-E204-8] Wave Chaotic Modes in a Penrose Unilluminable Room Microcavity

〇Takehiro Fukushima¹ (1.Okayama Pref. Univ.)

4:15 PM - 4:30 PM

[20p-E204-9] Calculation for the effect of axis offset in optical microcavity by Fox-Li method

〇Yuta Suzuki¹, Yuma Kitagawa¹, Shin-ichiro Tezuka¹ (1.Yokogawa Electric Corporation)

4:30 PM - 4:45 PM

[20p-E204-10] Effects of annealing on InGaP/ITO interfaces

〇(M1)Moritake Sakihara¹, Jianbo Liang¹, Naoteru Shigekawa¹ (1.Osaka City Univ.)

4:45 PM - 5:00 PM

△ [20p-E204-11] Fablication and evaluation of the transparent semiconductor using the NaCl crystal using a calcium ion

〇(M2)Shouhei You¹, Yuki Terakado¹, Tadashi Kawazoe¹, Takashi Tadokoro¹ (1.TDU)

Poster presentation

[19a-PA3-1~10] 3.13 Semiconductor optical devices

Thu. Sep 19, 2019 9:30 AM - 11:30 AM PA3 (PA)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[19a-PA3-1] Lasing characteristics of MQW lasers with double surface electrodes on wafer bonded

〇Xu Han¹, Masaki Matsuura¹, Koki Tsushima¹, Takahiro Ishizaki¹, Takuto Shirai¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

9:30 AM - 11:30 AM

[19a-PA3-2] Temperature dependence of GaInAsP / GaInAsP SCH-MQW laser diode on wafer bonded InP/Si substrate

〇Takahiro Ishizaki¹, Xu Han¹, Masaki Matsuura¹, Koki Tsushima¹, Takuto Shirai¹, Kazuhiko Shimomura¹ (1.Sophia University)

9:30 AM - 11:30 AM

[19a-PA3-3] PL characteristics of InAs QDs structure grown on directly bonded InP/Si and InP substrate

〇Takuto Shirai¹, Xu Han¹, Masaki Matsuura¹, Takahiro Ishizaki¹, Koki Tsushima¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

9:30 AM - 11:30 AM

[19a-PA3-4] Optical gain characterization of self-assembled InAs QDs for swept source applications

〇Toshiya Tsuji¹, Katsuya Onoue¹, Daigo Ikuno¹, Nobuhiko Ozaki¹, Hirotaka Ohsato², Eiichiro Watanabe², Naoki Ikeda², Yoshimasa Sugimoto², D. T. D. Childs³, R. A. Hogg³ (1.Wakayama Univ., 2.NIMS, 3.Univ. Glasgow)

9:30 AM - 11:30 AM

[19a-PA3-5] Photoluminescence spectroscopy of selective MOVPE growth of GaInAs/InP MQW structure
on wafer bonded InP/Si substrate

〇Koki Tsushima¹, Takahiro Ishizaki¹, Xu Han¹, Masaki Matsuura¹, Takuto Shirai¹ (1.Sophia Univ.)

9:30 AM - 11:30 AM

[19a-PA3-6] Improvement of efficiency of ZnO nanoparticle LEDs by localized surface plasmon resonance

〇Atsuya Tabuchi¹, Islam Md Shafiqul², Jie Lin³, Toshiyuki Yoshida¹, Yasuhisa Fujita¹ (1.Shimane Univ. Nat. Sci&technol., 2.Shimane Univ. Sci&Eng., 3.SNCC Co., Ltd.)

9:30 AM - 11:30 AM

[19a-PA3-7] Mode calculation of optical microcavity with tilted mirrors

〇Yuma Kitagawa¹, Yuta Suzuki¹, Shin-ichirou Tezuka¹ (1.Yokogawa electric corporation)

9:30 AM - 11:30 AM

[19a-PA3-8] Fabrication and evaluation of GaAs and InGaP photovoltaic devices for Optical Wireless Power Transmission

〇Shinnosuke Tsuboyama¹, Kensuke Hiwada¹, Masakazu Arai¹, Kouji Maeda¹ (1.Miyazaki Univ.)

9:30 AM - 11:30 AM

[19a-PA3-9] Crystalline Selenium-Based Stacked Pixel-Parallel CMOS Image Sensor Suitable for Single-Photon Counting

〇Masahide Goto¹, Shigeyuki Imura¹ (1.NHK STRL)

9:30 AM - 11:30 AM

[19a-PA3-10] Defect level estimation in chlorine-terminated hexagonal selenium thin-film

〇Shigeyuki Imura¹, Keitada Mineo¹, Kazunori Miyakawa¹, Masakazu Nanba¹, Misao Kubota¹ (1.NHK STRL)

Sessions

3 Optics and Photonics » 3.13 Semiconductor optical devices

[19p-E204-1~12] 3.13 Semiconductor optical devices

△ [19p-E204-1] Evaluation of Light Source Misalignment Tolerance of Fly-eye Lens in Optical Wireless Power Transmission

▲ [19p-E204-3] Improvement of appearance by scattering to color filters on solar cell for OWPT

▼ [19p-E204-4] Light Receiving Characteristics in case of Air to Underwater Optical Wireless Power Transmission

▲ [19p-E204-5] Numerical analysis of power generation characteristics in beam direction control of indoor optical wireless power transmission using mirror

▲ [19p-E204-6] Demonstration of Optical Wireless Power Transmission to Moving Object Using Infrared LED Marker in Dark Environment

▲ [19p-E204-7] Optimization of LED-based Optical Wireless Power Transmission for Compact IoT

△ [19p-E204-11] Effects of Mn-doped semiconductor nanoparticles on Si Solor Cells

[20a-E204-1~8] 3.13 Semiconductor optical devices

▲ [20a-E204-3] Reducing Dark Current Mechanisms for Barrier Infrared Photodetector Using Type II InAs/GaSb Superlattices

△ [20a-E204-4] [Highlight] FSI NIR InGaAs PhotoFETs Using Layer Transfer Technology

[20p-E204-1~11] 3.13 Semiconductor optical devices

△ [20p-E204-4] Design of 3D controlled resistance and absorption for high-efficiency VCSEL by proton implantation

△ [20p-E204-11] Fablication and evaluation of the transparent semiconductor using the NaCl crystal using a calcium ion

[19a-PA3-1~10] 3.13 Semiconductor optical devices

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