Oral presentation

[20a-E303-1~5] 13.2 Exploratory Materials, Physical Properties, Devices

Fri. Sep 20, 2019 10:30 AM - 11:45 AM E303 (E303)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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10:30 AM - 10:45 AM

[20a-E303-1] Theoretical analysis of vapor composition generated from BaSi₂ melt

〇Kosuke Hara¹, Junji Yamanaka¹, Keisuke Arimoto¹ (1.Univ. of Yamanashi)

10:45 AM - 11:00 AM

[20a-E303-2] Effect of substrate annealing conditions on BaSi₂ deposition by thermal evaporation

〇(M1)Daisuke Yazawa¹, Hara Kosuke¹, Yamanaka Junji¹, Arimoto Keisuke¹ (1.Yamanashi Univ.)

11:00 AM - 11:15 AM

[20a-E303-3] Application of BaSi2 film/Si to thermoelectric power generation

〇Takafumi Ishibe¹, Jinichiro Chikada¹, Suguru Yachi², Yudai Yamashita², Takuma Sato², Takashi Suemasu², Yoshiaki Nakamura¹ (1.Osaka Univ., 2.Univ. of Tsukuba)

11:15 AM - 11:30 AM

[20a-E303-4] Evaluation of absorption coefficient of Mg₂Si and external quantum efficiency of the PD

〇Takeru Miyauchi¹, Fumiya Takahashi¹, Daisuke Niioka¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

11:30 AM - 11:45 AM

▲ [20a-E303-5] Optical and Electrical Characterizations of Ge Type II Clathrate Films Grown on Sapphire Substrate

〇(D)Rahul Kumar¹, T. Maeda², R. Tanahashi², Y. Hazama², F. Ohashi², H. S. Jha², T. Kume^1,2 (1.Div. of Environmental and Renewable Energy Systems, Graduate School of Engineering, Gifu University, 2.Department of Electrical, Electronic & Computer Engineering, Gifu University)

Oral presentation

[20p-E303-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

Fri. Sep 20, 2019 1:45 PM - 5:45 PM E303 (E303)

Haruhiko Udono(Ibaraki Univ.), Yoshikazu Terai(Kyushu Inst. of Tech.), Kosuke Hara(Univ. of Yamanashi)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[20p-E303-1] Characterizations of C-doped BaSi₂ films formed by sputtering

〇Taira Nemoto¹, Takuma Sato¹, Masami Mesuda², Hideto Kuramochi², Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Tosoh Corp.)

2:00 PM - 2:15 PM

[20p-E303-2] Fabrication of n-Ru₂Si₃/p-Si pn junctions and photoresponse properties

〇Hiroki Nishi¹, Kenta Setojima¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech)

2:15 PM - 2:30 PM

[20p-E303-3] Preparations of AeSi₂ films by a co-sputtering process

〇Kodai Aoyama¹, Takao Shimizu¹, Hideto Kuramochi², Masami Mesuda², Ryo Akiike², Keisuke Ide¹, Takayoshi Katase¹, Toshio Kamiya¹, Yoshisato Kimura¹, Hiroshi Funakubo¹ (1.Tokyo Tech., 2.Tosoh corporation)

2:30 PM - 2:45 PM

[20p-E303-4] Formation of AlScN film by sputtering

〇SungLin Tsai¹, Kazuki Kusafuka¹, Takuya Hoshii¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui², Kuniyuki Kakushima¹ (1.Tokyo Tech. School of Eng., 2.Tokyo Tech. IIR)

3:00 PM - 3:15 PM

▼ [20p-E303-5] Investigation of hydrogen states in semiconducting BaSi2 by muon spin rotation

〇(D)Zhihao Xu¹, Takuma Sato¹, Jumpei Nakamura², Akihiro Koda², koichiro Shimomura², Takashi Suemasu¹ (1.Univ. Tsukuba, 2.KEK)

3:15 PM - 3:30 PM

[20p-E303-6] Defect characterization of B-doped p-BaSi₂ layers in p-BaSi₂/n-Si hetero junction solar cells by PL method

〇Ryota Sugiyama¹, Yamashita Yudai¹, Tianguo Deng¹, Zhihan Xu¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. of Tsukuba)

3:30 PM - 3:45 PM

▲ [20p-E303-7] Study of defects in p-type diamond semiconductor by photocurrent and photoluminescence spectroscopy

〇(D)Junjie Guo^1,2, Aboulaye Traore¹, Muhammad Hafiz Bin Abu Bakar^1,2, Toshiharu Makino^1,2, Satoshi Yamasaki^1,2, Masahiko Ogura², Takeaki Sakurai¹ (1.univ. Tsukuba, 2.inst. AIST)

3:45 PM - 4:00 PM

[20p-E303-8] Effects of Alkali Metals in Cu-Based Compound Thin Films

〇Shogo Ishizuka¹, Noboru Taguchi¹, Shinho Kim¹, Jiro Nishinaga¹, Yukiko Kamikawa¹ (1.AIST)

4:00 PM - 4:15 PM

△ [20p-E303-9] Phase-Shifting Electron Holography for In Situ Measurement of Electric Potential, Field and Charge Density Distributions in a Working P-N Junction Diode

〇(P)Satoshi Anada¹, Kazuo Yamamoto¹, Hirokazu Sasaki², Naoya Shibata^1,3, Yujin Hori², Kouhei Kinugawa², Akihiro Imamura², Tsukasa Hirayama¹ (1.JFCC, 2.Furukawa Electric, 3.Univ. Tokyo)

4:30 PM - 4:45 PM

[20p-E303-10] Investigation of optical properties of As-doped n-BaSi₂ epitaxial films

〇Sho Aonuki¹, Yudai Yamashita¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Tsukuba Univ.)

4:45 PM - 5:00 PM

[20p-E303-11] Relationship between Ag-dopant concentration and hole concentration in melt grown Mg₂Si

〇Keigo Goushu¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

5:00 PM - 5:15 PM

[20p-E303-12] Influence of growth temperature on the properties of B-doped BaSi₂ epitaxial films

〇Shu Sugiyama¹, Yudai Yamashita¹, Zhihao Xu¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

5:15 PM - 5:30 PM

[20p-E303-13] Ba substitution effects on thermoelectric properties in SrSi₂

〇Motoharu Imai¹, Shiva Singh¹ (1.NIMS)

5:30 PM - 5:45 PM

△ [20p-E303-14] Theoretical Study of Guest Molecule doping to Metal-Organic Framework

〇Takumi Morita^1,2, Sang-Gyu Koh¹, Takahiro Yamasaki², Jun Nara², Yoshinori Tanaka², Takahisa Ohno², Kentaro Kinoshita¹ (1.Tokyo Univ. of Sci., 2.NIMS)

Poster presentation

[21a-PA3-1~7] 13.2 Exploratory Materials, Physical Properties, Devices

Sat. Sep 21, 2019 9:30 AM - 11:30 AM PA3 (PA)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[21a-PA3-1] Optimization of Si/Fe composition ratio in growth of Sb-doped β-FeSi₂ epitaxial films

〇Ryota Kinoshita¹, Abe Mitsuki¹, Hajime Eguchi¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech)

9:30 AM - 11:30 AM

[21a-PA3-2] Frequency dependence of alternating current conductivity of Si/β-FeSi2 composite thin films with different post-heat treatment temperatures

〇(M2)Yuta Saito¹, Hiroshi Katsumata¹ (1.Meiji Univ.)

9:30 AM - 11:30 AM

[21a-PA3-3] Effects of post-annealing conditions on crystal structure and electrical properties of Mg₂Si_1-xSn_x thin films

〇(M2)Syotaro Fuse¹, Hiroshi Katsumata¹ (1.Meiji Univ.)

9:30 AM - 11:30 AM

[21a-PA3-4] Temperature dependence of lifetime and diffusion length of Mg₂Si -PD

〇Fumiya Takahashi¹, Daisuke Niioka¹, Takeru Miyauchi¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

9:30 AM - 11:30 AM

[21a-PA3-5] Influence of post annealing on optical properties in BaSi₂

〇Yurika Haku¹, Takuma Sato¹, Yudai Yamashita¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. of Tsukuba)

9:30 AM - 11:30 AM

[21a-PA3-6] Effect of evaporation source condition on quality of BaSi₂ films.

〇(M1)Souma Nishio¹, Yuki Naito¹, Katsushi Nishino¹ (1.Tokushima Univ.)

9:30 AM - 11:30 AM

[21a-PA3-7] Impurity difference of time resolution photothermal divergences signal on SiC surface

〇Shintaro Harada¹, Takanori Kozai¹, Takeshi Hujihara¹, Tao Zheng¹, Tomoya Konishi¹, Masaru Kamano¹ (1.NIT Anan College)

Sessions

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[20a-E303-1~5] 13.2 Exploratory Materials, Physical Properties, Devices

[20a-E303-1] Theoretical analysis of vapor composition generated from BaSi₂ melt

[20a-E303-2] Effect of substrate annealing conditions on BaSi₂ deposition by thermal evaporation

[20a-E303-3] Application of BaSi2 film/Si to thermoelectric power generation

[20a-E303-4] Evaluation of absorption coefficient of Mg₂Si and external quantum efficiency of the PD

▲ [20a-E303-5] Optical and Electrical Characterizations of Ge Type II Clathrate Films Grown on Sapphire Substrate

[20p-E303-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

[20p-E303-1] Characterizations of C-doped BaSi₂ films formed by sputtering

[20p-E303-2] Fabrication of n-Ru₂Si₃/p-Si pn junctions and photoresponse properties

[20p-E303-3] Preparations of AeSi₂ films by a co-sputtering process

[20p-E303-4] Formation of AlScN film by sputtering

▼ [20p-E303-5] Investigation of hydrogen states in semiconducting BaSi2 by muon spin rotation

[20p-E303-6] Defect characterization of B-doped p-BaSi₂ layers in p-BaSi₂/n-Si hetero junction solar cells by PL method

▲ [20p-E303-7] Study of defects in p-type diamond semiconductor by photocurrent and photoluminescence spectroscopy

[20p-E303-8] Effects of Alkali Metals in Cu-Based Compound Thin Films

△ [20p-E303-9] Phase-Shifting Electron Holography for In Situ Measurement of Electric Potential, Field and Charge Density Distributions in a Working P-N Junction Diode

[20p-E303-10] Investigation of optical properties of As-doped n-BaSi₂ epitaxial films

[20p-E303-11] Relationship between Ag-dopant concentration and hole concentration in melt grown Mg₂Si

[20p-E303-12] Influence of growth temperature on the properties of B-doped BaSi₂ epitaxial films

[20p-E303-13] Ba substitution effects on thermoelectric properties in SrSi₂

△ [20p-E303-14] Theoretical Study of Guest Molecule doping to Metal-Organic Framework

[21a-PA3-1~7] 13.2 Exploratory Materials, Physical Properties, Devices

[21a-PA3-1] Optimization of Si/Fe composition ratio in growth of Sb-doped β-FeSi₂ epitaxial films

[21a-PA3-2] Frequency dependence of alternating current conductivity of Si/β-FeSi2 composite thin films with different post-heat treatment temperatures

[21a-PA3-3] Effects of post-annealing conditions on crystal structure and electrical properties of Mg₂Si_1-xSn_x thin films

[21a-PA3-4] Temperature dependence of lifetime and diffusion length of Mg₂Si -PD

[21a-PA3-5] Influence of post annealing on optical properties in BaSi₂

[21a-PA3-6] Effect of evaporation source condition on quality of BaSi₂ films.

[21a-PA3-7] Impurity difference of time resolution photothermal divergences signal on SiC surface

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