[F-10-5L] Defect Fermi level pinning models for HfO2 : p-metal gates

John Robertson (1.Engineering Dept, Cambridge University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[G-1-1] Next Generation High-Efficiency RF Transmitter Technology for Basestations

Peter Asbeck, Don Kimball, Jinho Jeong, Paul Draxler, Chin Hsia, Lawrence Larson (1.University of California, 2.Kwangwoon University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[G-1-2] Normally-off AlGaN/GaN MIS-HFETs Using Non-polar a-Plane

Masayuki Kuroda, Tetsuzo Ueda, Tsuyoshi Tanaka (1.Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[G-1-3] Gain Improvement of Enhancement-mode AlGaN/GaN HEMTs Using Dual-Gate Architectures

Ruonan Wang, Yichao Wu, Wilson C. W. Tang, Kei May Lau, Kevin J. Chen (1.Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology Clear Water Bay)

2007 International Conference on Solid State Devices and Materials |PDF Download

[G-1-4] p-type InGaN Cap Layer for Normally-off Operation in AlGaN/GaN HFETs

Mitsuaki Shimizu, Guaxi Piao, Masaki Inada, Hajime Okumura, Yoshiki Yano, Nakao Akutsu (1.National Institute of Advanced Industrial Science and Technology, 2.Tsukuba Laboratory, Taiyo Nippon Sanso Corporation)

2007 International Conference on Solid State Devices and Materials |PDF Download

[G-1-5] Finger Length Optimization for AlGaN/GaN HEMT and InGaP/GaAs HBT by Using FDTD Electromagnetic and Device Co-Simulation Technique

Akira Chokki, Yasuta Shinohara, Ryo Ishikawa, Kazuhiko Honjo (1.Advanced Wireless Communication Research Center (AWCC), The University of Electro-Communications)

2007 International Conference on Solid State Devices and Materials |PDF Download

[G-1-6] Layout Optimization of AlGaN/GaN HEMTs for High-power Applications

Yu-Syuan Lin, Ting-Chi Li, Yung-Chih Wang, Shawn S.H. Hsu (1.Institute of Electronics Engineering, National Tsing Hua University, 2.Electronics and Optoelectronics Research Laboratory, Industrial Technology Research Institute, 3.Department of Electronics Engineering, National Chiao Tung University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[G-1-7] A New 20-element distributed Small-Signal Model and Integrated Intelligent Extraction Method applied to AlGaN/GaN HEMTs up to 40GHz

J. Lu, B. Liu, Y. Wang, M. Li, L. Ma, Z. Wang, Z.P. Yu (1.Institute of Microelectronics of Tsinghua university)

2007 International Conference on Solid State Devices and Materials |PDF Download

[G-2-1] Parasitic effects and reliability issues on GaN based HEMTs

Gaudenzio Meneghesso, Christian Dua, Marco Peroni, Michael Uren, Enrico Zanoni (1.Department of Information Engineering, University of Padova, 2.Alcatel-Thales III-V Lab, Microel. Group, GIE, 3.Selex SI, GaAs Foundry Unit, Engineering Department Via Tiburtina, 4.QinetiQ Ltd)

2007 International Conference on Solid State Devices and Materials |PDF Download

[G-2-2] Reduced gate leakage for AlGaN/GaN HEMTs grown on a-plane (1120) sapphire

S. Lawrence Selvaraj, Takashi Egawa (1.Research Center for Nano-Device and System, Nagoya Institute of Technology)

2007 International Conference on Solid State Devices and Materials |PDF Download

591 results (241 - 250)

« Prev
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
Next »

▲